Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Infrared sensor

A technology of infrared sensor and sensor body, which is applied in the field of sensors, can solve the problems that the application effect of pyroelectric infrared sensors affects the overall production, the cost of infrared sensors is low, and the moisture-proof is not paid much attention to, so as to achieve no secondary breakdown phenomenon and amplified detection The effect of low signal and power consumption

Inactive Publication Date: 2019-08-20
ARMY ENG UNIV OF PLA
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Infrared sensing technology has been widely used in the fields of modern science and technology, national defense, industry and agriculture. Infrared sensors are installed on existing LED lamps to control the switch of LEDs. Infrared sensors work by detecting infrared rays emitted by the human body. At present Infrared sensors are difficult to prevent moisture. Due to the low cost of infrared sensors, many manufacturers do not pay much attention to moisture resistance, resulting in a short service life. Although the cost is low, it is easily interfered by various heat sources and light sources, which affects pyroelectric infrared sensors. However, the overall production is affected due to the damage of the infrared sensor. Therefore, an improved technology is urgently needed to solve this problem existing in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Infrared sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Embodiment 1: as figure 1 The shown infrared sensor includes a sensor body 7, transparent glass 1, epoxy resin glue 2, optical filter 3, connecting pin 4, circuit element 5, field effect tube 6, sensor body 7, base 8 With the shell 9, the bottom of the shell 9 is provided with a base 8, and the two ends of the base 8 are provided with connecting pins 4, and the lower ends of the connecting pins 4 are arranged under the base 8, and the connecting pins 4 The top of the connecting pin 4 penetrates to the upper surface of the base 8 and is arranged inside the casing 9. The field effect tube 6 and the sensor body 7 are arranged inside the casing 9. The top of the connecting pin 4 is connected to the circuit element 5, and the circuit element 5 The top of the field effect tube 6 is connected to the field effect tube 6, and the top of the field effect tube 6 is connected to the sensor body 7. The upper surface of the sensor body 7 does not touch the upper surface of the casing...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an infrared sensor which comprises a sensor body, transparent glass, epoxy glue, a filter, a connecting pin, a circuit component, a field effect transistor, a sensor body, a base and a casing. According to the invention, the filter and the transparent glass are arranged on the top of the casing to reduce the influence of various external heat sources and light sources on the pyroelectric infrared sensor; in order to have higher sensitivity to infrared radiation in a certain wavelength range, the filter is arranged in the casing; in addition to allowing passing of infrared radiation in certain wavelength ranges, the filter can reject light, sunlight and other infrared radiation; in addition, the field effect transistor is arranged in the casing, and the field effecttransistor has the advantages of high input resistance, low noise, low power consumption, large dynamic range, easy integration, no secondary breakdown, wide safe working area and the like; a detection signal can be amplified; the performance is stable; the accuracy of the signal is improved; a desiccant is arranged inside the casing to prevent moisture inside the casing; and the service life of the product is improved.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to an infrared sensor. Background technique [0002] The infrared sensing system is a measurement system using infrared rays as the medium. It can be divided into five categories according to the function, and can be divided into photon detectors and thermal detectors according to the detection mechanism. Infrared sensing technology has been widely used in the fields of modern science and technology, national defense, industry and agriculture. Infrared sensors are installed on existing LED lamps to control the switch of LEDs. Infrared sensors work by detecting infrared rays emitted by the human body. At present Infrared sensors are difficult to prevent moisture. Due to the low cost of infrared sensors, many manufacturers do not pay much attention to moisture resistance, resulting in a short service life. Although the cost is low, they are easily interfered by various heat sources an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01J5/04G01J5/06
CPCG01J5/041G01J5/06
Inventor 赵喜求隋斌许浩李校刚刘曜鹏陈忠贵朱旭扈佃海郭从新蒋良艳
Owner ARMY ENG UNIV OF PLA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com