Method for transferring graphene film

A graphene film, graphene technology, applied in graphene, chemical instruments and methods, inorganic chemistry and other directions, can solve the problems of organic residues, low graphene quality, easy cracks in graphene films, etc., to achieve high integrity , prevent cracks and wrinkles, improve the effect of transfer quality

Active Publication Date: 2019-08-23
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of this invention is to provide a kind of method of transfer graphene film, to solve the graphene film that obtains in the existing PMMA transfer method and easily appear crackle, organic residue and The problem of poor quality graphene

Method used

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  • Method for transferring graphene film

Examples

Experimental program
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Effect test

Embodiment 1

[0040] The method for transferring the graphene film of the present embodiment may further comprise the steps:

[0041] (1) Utilize the spin coating method to uniformly cover PMMA on the copper foil substrate obtained by chemical vapor deposition to grow graphene, leave it at room temperature and heat it to solidify to form a film, forming a PMMA / graphene / copper foil substrate The first structural layer; wherein, PMMA is a mixed solution of PMMA with a mass fraction of 2% and toluene as an organic solvent, the curing temperature is 120° C., and the curing time is 20 minutes.

[0042] (2) the copper foil in the first structural layer is etched away, and is cleaned repeatedly, obtains the second structural layer with PMMA / graphene; Wherein the etching liquid that adopts is the ammonium persulfate (0.5mol / L) Ammonium persulfate can be replaced with ferric chloride of the same concentration); The cleaning steps include: first adopting a mass fraction of 5% dilute hydrochloric acid...

Embodiment 2

[0047] The method for transferring the graphene film of the present embodiment may further comprise the steps:

[0048] (1) Utilize the spin coating method to evenly cover PMMA on the nickel foil substrate obtained by chemical vapor deposition to grow graphene, leave it at room temperature and heat it to solidify to form a film, forming a PMMA / graphene / nickel foil substrate The first structural layer; wherein, PMMA is a mixed solution of PMMA with a mass fraction of 4% and toluene as an organic solvent, the curing temperature is 135° C., and the curing time is 40 minutes.

[0049] (2) the nickel foil in the first structural layer is etched away, and is cleaned repeatedly, obtains the second structural layer with PMMA / graphene; Wherein the etching liquid that adopts is the ammonium persulfate (persulfate) of 1mol / L Ammonium sulfate can be replaced with ferric chloride of the same concentration); The cleaning steps include: first adopting a mass fraction of 7% dilute hydrochlori...

Embodiment 3

[0054] The method for transferring the graphene film of the present embodiment may further comprise the steps:

[0055] (1) Utilize the spin coating method to uniformly cover PMMA on the copper foil substrate with graphene grown by chemical vapor deposition, leave it at room temperature and heat it to solidify and form a film to form a PMMA / graphene / copper foil substrate The first structural layer; wherein, PMMA is a mixed solution of PMMA with a mass fraction of 6% and toluene as an organic solvent, the curing temperature is 150° C., and the curing time is 60 minutes.

[0056] (2) the copper foil in the first structural layer is etched away, and is cleaned repeatedly, obtains the second structural layer with PMMA / graphene; Wherein the etching liquid that adopts is the ammonium persulfate (1.5mol / L) Ammonium persulfate can be replaced with ferric chloride of the same concentration); The cleaning steps include: first adopting a mass fraction of 10% dilute hydrochloric acid for ...

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Abstract

The invention discloses a method for transferring a graphene film, and belongs to the technical field of graphene film preparation. The method comprises the following steps: spin-coating a graphene-grown metal substrate with PMMA to form a first structural layer having a PMMA/graphene/metal substrate, etching away the metal, and performing cleaning multiple times; covering a target graphene-grownmetal substrate with a second structural layer having PMMA/graphene to form a third structural layer having a PMMA/graphene/target graphene/metal substrate, etching away the metal, and performing cleaning multiple times; and placing a fourth structural layer having PMMA/graphene/target graphene on the target substrate, performing heating, tearing off the second structural layer from the target graphene, and transferring the target graphene to the target substrate. The method for transferring a graphene film of the invention is simple to operate, and the transferred graphene film has a high transfer quality, a high cleanliness, a good integrity and no organic residue, and the PMMA/graphene can be repeatedly used as a support layer.

Description

technical field [0001] The invention relates to the technical field of graphene film preparation, in particular to a method for transferring a graphene film. Background technique [0002] Graphene is a two-dimensional material with physical and chemical properties. At present, graphene grown on metal substrates generally cannot be used directly, and needs to be transferred to a target substrate of a non-metallic substrate for subsequent applications. Many chemical substances are involved in the transfer process of graphene, which will inevitably contaminate graphene and significantly affect the properties of graphene. Therefore, how to effectively avoid or remove pollutants is an important topic in the research of graphene film transfer technology. [0003] In the graphene film transfer technology, the method adopted is the exfoliation method or PMMA transfer method, wherein the exfoliation method usually causes certain damage to the integrity of the graphene film, and the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/194C01B32/182
CPCC01B32/194C01B32/182C01B2204/30
Inventor 沈长青李雪松青芳竹
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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