A synthesis device and method for polycrystalline phosphorous germanium zinc in a single temperature zone

Abstract

The invention relates to a synthesis device and a method of a phosphorus germanium zinc polycrystal in single-temperature region. The device comprises a propulsion device, a rotating device, a synthetic inner tube and a heating furnace, P, Zn and Ge raw materials are weighed according to that ZGP stoichiometric ratio and put into that synthetic inner tube and the tube is sealed in vacuum, the synthetic inner tube is connected with the rotary propulsion device and placed into an inlet end of a heating furnace, a temperature at that inlet end of the heating zone in the furnace is raised to 520 DEG C, and then the synthesis innER tube is slowly pushed into the heating zone using the rotary propulsion device, the propulsion rate is controlled to ensure that the steam pressure generated by theP sublimation in the synthesis inner tube is raised at a relatively small rate and that the P steam has sufficient reaction time with zinc; after the synthetic inner tube is all pushed into the heating zone, the temperature in the heating zone is slowly raised to 1060 DEG C, and the isothermal temperature is maintained at this temperature, and the synthetic inner tube is slowly rotated by the rotary propulsion device, so that the raw materials are fully reacted to synthesize the ZGP polycrystalline material. The preparation process of the invention is controllable, and the purity of the single-phase crystal of phosphogermanium zinc is high.

Description

technical field [0001] The invention belongs to the field of preparation of ternary compound semiconductor materials, and relates to a synthesis device and method for polycrystalline phosphorus, germanium and zinc in a single temperature zone. A tube furnace with a single temperature zone is used in conjunction with a synthesis device at one end of the furnace body, and the temperature is raised in stages and kept at a constant temperature. The method of advancing and rotating the reaction tube realizes the stable and controllable synthesis of phosphorus, germanium and zinc polycrystals. Background technique [0002] With the development of nonlinear optical crystal and optical parametric oscillator technology, ZnGeP2 (ZGP) crystal, as an infrared nonlinear optical material with excellent performance, has attracted much attention at home and abroad. ZGP crystal is a nonlinear optical semiconductor material with excellent performance. It has a large nonlinear coefficient and ...

AI Technical Summary

Problems solved by technology

[0003] At present, it is difficult to obtain a large amount of high-purity ZGP polycrystalline raw materials. There are two main problems: one is that the phosphorus vapor pressure is relatively high at high temperature, and it is easy to cause explosion hazards in the synthetic quartz tube during the synthesis process.

The second is that the ZGP compound contains two volatile components, Zn and P, and it is difficult to obtain a polycrystalline material with an accurate stoichiometric ratio even with the commonly used gas-phase transport synthesis method.

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