Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor structure and forming method thereof

A semiconductor and gas technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve problems such as semiconductor structure performance needs to be improved

Active Publication Date: 2019-09-13
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the performance of semiconductor structures in the prior art still needs to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] It can be seen from the background art that the performance of existing semiconductor structures still needs to be improved.

[0037] An analysis is now made in conjunction with a method for forming a semiconductor structure. The process steps of forming a semiconductor structure mainly include: providing a substrate, the substrate has a dielectric layer, and the dielectric layer has an opening penetrating through the thickness of the dielectric layer. The opening There are source and drain doped regions in the substrate on both sides; an oxide layer is formed at the bottom of the opening by a chemical oxidation method; a high-k gate dielectric layer is formed on the surface of the oxide layer; after the high-k gate dielectric layer is formed, A metal gate is formed filling the opening.

[0038] The performance of the semiconductor structure formed by the above method is poor. The reason for the analysis is that the thickness of the inversion layer of the semiconductor ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a semiconductor structure and a forming method thereof. The forming method of the semiconductor structure comprises the following steps that a substrate is provided, wherein a dielectric layer is arranged on the substrate, and an opening penetrating through the thickness of the dielectric layer is formed in the dielectric layer; a first oxidation layer is formed at the bottom of the opening; a sacrificial layer is formed on the first oxidation layer; in the process of forming the sacrificial layer, oxidation treatment is carried out on a part of thickness of the substrate which is positioned at the bottom of the first oxidation layer, so that the first oxidation layer is converted into a second oxidation layer, material of the second oxidation layer is the same as the material of the first oxidation layer, and the thickness of the second oxidation layer is larger than that of the first oxidation layer; and the sacrificial layer is removed. According to the method, the leakage current can be effectively reduced, and the performance of the semiconductor structure can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] In semiconductor manufacturing, as the feature size of integrated circuits continues to decrease, the channel length of MOSFETs has also been shortened accordingly. However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, resulting in poor control ability of the gate to the channel, and short-channel effects (SCE: short-channel effects) more likely to happen. [0003] The Fin Field Effect Transistor (FinFET) has outstanding performance in suppressing the short channel effect. The gate of the FinFET can control the fin at least from both sides. Therefore, compared with the planar MOSFET, the gate of the FinFET has an The control ability is stronger, and the short channel effect can be well suppr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/8238H01L27/092
CPCH01L21/823821H01L21/823857H01L27/0924
Inventor 何有丰
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com