Semiconductor structure and forming method thereof

A semiconductor and gas technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve problems such as semiconductor structure performance needs to be improved
CN110233134AActive Publication Date: 2019-09-13SEMICON MFG INT (SHANGHAI) CORP +1
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Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
SEMICON MFG INT (SHANGHAI) CORP
Publication Date
2019-09-13

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Abstract

The invention provides a semiconductor structure and a forming method thereof. The forming method of the semiconductor structure comprises the following steps that a substrate is provided, wherein a dielectric layer is arranged on the substrate, and an opening penetrating through the thickness of the dielectric layer is formed in the dielectric layer; a first oxidation layer is formed at the bottom of the opening; a sacrificial layer is formed on the first oxidation layer; in the process of forming the sacrificial layer, oxidation treatment is carried out on a part of thickness of the substrate which is positioned at the bottom of the first oxidation layer, so that the first oxidation layer is converted into a second oxidation layer, material of the second oxidation layer is the same as the material of the first oxidation layer, and the thickness of the second oxidation layer is larger than that of the first oxidation layer; and the sacrificial layer is removed. According to the method, the leakage current can be effectively reduced, and the performance of the semiconductor structure can be improved.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique

[0002] In semiconductor manufacturing, as the feature size of integrated circuits continues to decrease, the channel length of MOSFETs has also been shortened accordingly. However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, resulting in poor control ability of the gate to the channel, and short-channel effects (SCE: short-channel effects) more likely to happen.

[0003] The Fin Field Effect Transistor (FinFET) has outstanding performance in suppressing the short channel effect. The gate of the FinFET can control the fin at least from both sides. Therefore, compared with the planar MOSFET, the gate of the FinFET has an The control ability is stronger, and the short channel effect can be well suppr...

Claims

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