Preparation process for polysilicon film

A polysilicon thin film and preparation process technology, applied in polycrystalline material growth, metal material coating process, crystal growth, etc., can solve the problems of difficult crystallization of thin films, unfavorable thin film crystallization, long annealing time, etc., and achieve warpage The effect of low density, saving processing steps and reducing processing cost

Inactive Publication Date: 2019-09-20
TIANJIN ZHONGHUAN ADVANCED MATERIAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the annealing temperature is too low, it is difficult to crystallize the film, and the time control has certain requirements. If the annealing time is too long or too low, it is not conducive to the formation of film crystallization.

Method used

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  • Preparation process for polysilicon film
  • Preparation process for polysilicon film
  • Preparation process for polysilicon film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] 1. Process preparation:

[0037] 1. Raw materials: 150 pieces of 8-inch sour rot slices. There is no polysilicon film or oxide film on the surface of the sour rot slices, no surface cracks, no contamination, and no edge chipping or missing corners;

[0038] 2. Processing equipment: Telα-8s, DJ-853V;

[0039] 3. Measuring tool: ADE9600 automatic silicon wafer sorter;

[0040] 4. Excipients: SiH 4 , N 2 .

[0041] 2. The preparation process of polysilicon thin film is as follows:

[0042] Use a black PP basket to load the silicon wafer into the processing equipment, select the automatic upload mode, load the silicon wafer into the boat by the robot, and select the process 8000A, that is, the film thickness of the prepared polysilicon film is 800nm.

[0043] The specific process parameters are:

[0044]

Embodiment 2

[0046] 1. Process preparation:

[0047] 1. Raw materials: 150 pieces of 8-inch sour rot slices. There is no polysilicon film or oxide film on the surface of the sour rot slices, no surface cracks, no contamination, and no edge chipping or missing corners;

[0048] 2. Processing equipment: Telα-8s, DJ-853V;

[0049]3. Measuring tool: ADE9600 automatic silicon wafer sorter;

[0050] 4. Excipients: SiH 4 , N 2 .

[0051] 2. The preparation process of polysilicon thin film is as follows:

[0052] Use a black PP basket to load the silicon wafer into the processing equipment, select the automatic uploading mode, load the silicon wafer into the boat by the robot, and select the process 8000A, that is, the film thickness of the prepared polysilicon film is 800nm.

[0053] The specific process parameters are:

[0054]

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Abstract

The invention provides a preparation process for a polysilicon film. The preparation process comprises the following steps: introducing SiH4 into a vertical furnace, and performing constant-temperature constant-pressure deposition under the conditions of a pressure of 15-35 Pa and a temperature of 650-675 DEG C so as to allow the polysilicon film to grown on the surface of a silicon wafer. A polycrystalline silicon wafer prepared by using the polysilicon film preparation process of the invention has low warpage and small bending increment after polishing, and does not need treatment by an annealing process, so the risk of abnormality of the silicon wafer is effectively reduced, processing steps are decreased, a product processing cycle is shortened, and processing cost is lowered.

Description

technical field [0001] The invention belongs to the technical field of polysilicon film preparation, and in particular relates to a polysilicon film preparation process, which is especially suitable for the preparation of 5-inch, 6-inch and 8-inch polysilicon films. Background technique [0002] In the field of silicon wafer manufacturing, a layer of polysilicon film is deposited on the back of the silicon wafer, and the stress generated by the grain boundary dislocation is used to achieve the purpose of adsorbing metal impurities, so as to obtain a work area free of impurities on the polished surface. At the same time, the polysilicon film can react with oxygen during high-temperature processing to prepare a layer of oxide film, which can prevent the external expansion of dopants and prevent the effect of self-doping. [0003] The general preparation method of polysilicon film is to grow an amorphous film on the surface of a silicon wafer under high temperature conditions u...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/14C30B29/06C23C16/455C23C16/52C23C16/24
CPCC23C16/24C23C16/455C23C16/52C30B28/14C30B29/06
Inventor 邓碧鑫门小云刘茂王力由佰玲谢艳王聚安武卫
Owner TIANJIN ZHONGHUAN ADVANCED MATERIAL TECH
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