Ultraviolet photoelectric detector and preparation method thereof
A technology of electrical detectors and ultraviolet light, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of low photoconductive gain, hindering the practical application of AlN, and low carrier concentration, achieving high photoconductive gain and improving Effect of photoconductive gain, simplicity of process implementation
Active Publication Date: 2019-09-20
HARBIN INST OF TECH
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Problems solved by technology
However, the carrier concentration of AlN is low, and the existing AlN-based ultraviolet photodetectors have the problem of low photoconductive gain, which hinders the practical application of AlN in ultraviolet light detection technology.
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[0037] It should be noted that, in the case of no conflict, the features in the embodiments of the present invention can be combined with each other. The meanings of the terms "comprising", "comprising", "containing" and "having" are non-limiting, that is, other steps and other components that do not affect the result can be added. The above terms encompass the terms "consisting of" and "consisting essentially of". Unless otherwise specified, materials, equipment, and reagents are commercially available.
[0038] In order to make the above objects, features and advantages of the present invention more comprehensible, specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0039] Vacuum ultraviolet refers to the radiated light whose bandgap width is lower than 200nm. Since it is easily absorbed by oxygen in the atmosphere below 200nm, it is named vacuum ultraviolet; and the detection of vacuum ultraviolet...
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Abstract
The invention provides an ultraviolet photoelectric detector, which comprises a substrate, a source electrode and a drain electrode, wherein the source electrode and the drain electrode are arranged on the substrate. The ultraviolet photoelectric detector further comprises a quantum dot modified nanowire arranged on the substrate, wherein the two ends of the quantum dot modified nanowires are respectively connected with the source electrode and the drain electrode; the quantum dot modified nanowire includes an aluminum nitride nanowire and nickel oxide quantum dots, the nickel oxide quantum dots are attached to the surface of the aluminum nitride nanowire and form a p-n junction with the aluminum nitride nanowire therebetween. According to the ultraviolet photoelectric detector provided by the invention, the concentration of carriers of the aluminum nitride nanowire is effectively improved by using the p-n junction formed between the aluminum nitride nanowire and the nickel oxide quantum dots, thereby improving the photoconductive gain of the ultraviolet photoelectric detector, and realizing the detection of the ultraviolet photoelectric detector for VUV ultraviolet rays.
Description
technical field [0001] The invention relates to the field of ultraviolet photodetectors, in particular to an ultraviolet photodetector and its preparation method and application. Background technique [0002] Most semiconductor ultraviolet photodetectors work based on the photoconductive effect of semiconductor materials, that is, using ultraviolet light to irradiate semiconductor materials with suitable forbidden band widths, so that electrons located in the valence band transition to the conduction band to form non-equilibrium carriers, which is significantly The conductivity of semiconductor materials can be greatly increased, so as to realize the detection of ultraviolet light signals. Among them, ultraviolet photodetectors have attracted attention because of their high visible light transmittance, good thermal stability and chemical stability, and are widely used in environmental monitoring, missile tracking, oil spill detection and building protection, etc., in militar...
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IPC IPC(8): H01L31/0352H01L31/0304H01L31/032H01L31/109H01L31/18B82Y40/00
CPCB82Y40/00H01L31/03044H01L31/032H01L31/035218H01L31/035227H01L31/109H01L31/18Y02P70/50
Inventor 宋波刘梦婷王先杰姚泰韩杰才
Owner HARBIN INST OF TECH