Indium oxide material for gas detection and preparation method thereof

A gas detection, indium oxide technology, applied in nanotechnology for materials and surface science, chemical instruments and methods, analytical materials, etc., to meet the requirements of fast response recovery, short response recovery time, excellent selectivity and stability. Effect

Inactive Publication Date: 2019-09-27
NORTHEAST NORMAL UNIVERSITY
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Problems solved by technology

[0006] In summary, the existing problems in the prior art are: various In 2 o 3 Morphology has been used in gas sensors, such as nanofibers, nanosheets, nanowires, and hollow tube structures, in which the three-dimensional (3D) microstructure, porosity, and hi

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  • Indium oxide material for gas detection and preparation method thereof
  • Indium oxide material for gas detection and preparation method thereof
  • Indium oxide material for gas detection and preparation method thereof

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Embodiment Construction

[0037] In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0038] The synthesized indium oxide material of the invention is used as a gas sensor. The composition of the annealed material is controlled by controlling the annealing temperature of indium sulfide in air. Finally, the three materials are tested for gas sensitivity, and the gas sensitivity response of indium oxide is the best. In air atmosphere, raise from 20°C to 400°C at a rate of 2°C / min, hold for 1h, then cool down to room temperature at 5°C / min (to obtain indium sulfide / indium oxide), from 20°C at a rate of 2°C / min Rise to 500°C and keep for 1h, then cool down to room temperature at 5°C / min (to obtain indium oxide)...

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Abstract

The invention belongs to the technical field of gas detection, and discloses an indium oxide material for gas detection and a preparation method thereof. The preparation method is characterized in that thiourea and indium chloride tetrahydrate are taken as raw materials, first uniform mixing is performed by magnetic stirring, and a reaction is performed in a teflon reaction kettle for 16 h at 180 DEG C to obtain an indium sulfide material. Compared with indium sulfide and indium sulfide/indium oxide intermediate products, indium oxide has better ethanol sensing performance at 260 DEG C, the linear range is 2 ppm to 100 ppm, and the limit of detection (LOD) is as low as 0.4 ppm. Meanwhile, an indium oxide sensor also has good repeatability and selectivity mainly due to more chemical oxygen and oxygen vacancies on the surface of the indium oxide material. The preparation strategy of a flower-shaped porous sphere sensing material assembled by simple two-dimensional nanosheets can provide convenience for the preparation of other ethanol gas sensors and the preparation of other sensors based on two-dimensional metal oxide semiconductor materials.

Description

technical field [0001] The invention belongs to the technical field of gas detection, and in particular relates to an indium oxide material and a preparation method for gas detection. Background technique [0002] At present, the existing technologies commonly used in the industry are as follows: [0003] As people pay more and more attention to environmental monitoring, industrial emission control and disease diagnosis, high-sensitivity gas sensors have attracted more and more attention. Among various types of gas sensors, metal-oxide-semiconductor (MOS) sensors are one of the most attractive sensors due to their advantages of simple fabrication, low cost, and high sensitivity. However, there are many factors that affect the sensing performance of MOS gas sensors. The intrinsic properties of metal-oxide-semiconductor (MOS) sensor gas-sensing materials are one of the key factors that people should consider first. Gas sensing materials as electron donors or acceptors can a...

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Application Information

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IPC IPC(8): C01G15/00G01N27/12B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01G15/00C01P2002/70C01P2002/72C01P2004/03C01P2004/04C01P2006/12C01P2006/17G01N27/127
Inventor 周明李磊林小艳
Owner NORTHEAST NORMAL UNIVERSITY
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