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Slurry for reducing graphene oxide in predetermined pattern, method of use and obtained graphene film layer

A technology of predetermined pattern and graphene film, applied in the direction of graphene, nano-carbon, etc., can solve the problems of unsuitability, harsh environmental requirements, long lithography process, etc., and achieve the effect of clear edge and complete pattern.

Active Publication Date: 2021-06-04
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The photolithography process is relatively long and has strict environmental requirements. Photoresists usually have certain toxicity and are not suitable for general and quantitative preparation of graphene patterned films.

Method used

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  • Slurry for reducing graphene oxide in predetermined pattern, method of use and obtained graphene film layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] A method for preparing a patterned graphene film, comprising the steps of:

[0054] (1) Prepare a 10nm thick graphene oxide film on the PET film surface by spin coating;

[0055] (2) According to aluminum powder (particle diameter is 10 μm) 50wt%, polyester resin (weight average molecular weight is greater than 100,000) 10wt%, the ratio preparation slurry of N-methylpyrrolidone 40wt%, records the viscosity of described slurry is 1000 centipoise;

[0056] (3) The slurry of step (2) is coated on the surface of the graphene oxide film prepared in step (1) by screen printing, and the line width is 50 μm;

[0057] (4) Stand at a temperature of 50°C for 1 min, dry for 5 min, pickle for 1 min, wash with water for 2 min, and dry for 1 min to obtain a graphene patterned film with a line width of 60 μm, clear edges, and a complete graphene film layer. The thickness of the graphene patterned film was measured to be about 10 nm.

Embodiment 2

[0065] A method for preparing a patterned graphene film, comprising the steps of:

[0066] (1) Prepare a 1 μm thick graphene oxide film on the surface of the PET film by dipping;

[0067] (2) Prepare the slurry according to the ratio of 30wt% of zinc powder (2 μm in particle size), 5wt% of polyurethane (250,000 weight average molecular weight), and 65wt% of DMF (N,N-dimethylformamide), and the measured viscosity is 800 centipoise;

[0068] (3) Applying the slurry of step (2) to the surface of the graphene oxide film prepared in step (1) by screen printing, the line width is 200 μm;

[0069] (4) Stand at a temperature of 30°C for 5 minutes, dry for 5 minutes, pickle for 1 minute, wash with water for 2 minutes, and dry for 10 minutes to obtain a graphene patterned film with a line width of 220 μm, clear edges, and a complete graphene film layer. The thickness of the graphene patterned film was measured to be about 1 μm.

Embodiment 3

[0077] A method for preparing a patterned graphene film, comprising the steps of:

[0078] (1) Prepare a 10 μm thick graphene oxide film on the surface of the PP film by extrusion coating;

[0079] (2) According to stannous chloride 30wt%, PVP (polyvinylpyrrolidone) (weight-average molecular weight is 150,000) 15wt%, DMSO (dimethyl sulfoxide) 55wt% ratio preparation slurry, record viscosity is 400 centimeters Park;

[0080] (3) coating the slurry of step (2) on the surface of the graphene oxide film prepared in step (1) by gravure printing, with a line width of 500 μm;

[0081] (4) Stand at a temperature of 40°C for 10 minutes, dry for 10 minutes, pickle for 5 minutes, wash with water for 5 minutes, and dry for 15 minutes to obtain a graphene patterned film with a line width of 450 μm, clear edges, and a complete graphene film layer. The thickness of the graphene patterned film was measured to be 9.5 μm.

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Abstract

The invention relates to a slurry for reducing graphene oxide according to a predetermined pattern. The slurry includes the following components by weight percentage: 30-70% of reducing agent; 5-15% of polymer compound; 15-65% of solvent; The sum of the components of the slurry is 100%. The invention provides a reducing slurry, which can be attached to the graphene oxide film layer, contact with the graphene oxide film layer, and can be tiled on the graphene oxide film layer according to a predetermined pattern for reduction reaction, and the oxidized Graphene is reduced to a graphene film layer according to a predetermined pattern.

Description

technical field [0001] The invention belongs to the field of graphene film preparation, and in particular relates to a slurry for reducing graphene oxide according to a predetermined pattern, a use method and the obtained graphene film layer. Background technique [0002] Graphene is an atomic layer two-dimensional nanomaterial with good electrical conductivity, high strength, and high thermal conductivity. It has attracted extensive attention from scientific research and the market, and has important forward-looking application value. As a kind of graphene material, graphene film is widely used in electronic devices, seawater desalination, new energy materials and other fields. [0003] As a basic technology for device construction, patterning technology is currently being applied in a large number of fields. In order to realize the fine combination of circuits, devices and components, the patterning technology has been developed step by step from the original millimeter l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/184
CPCC01B32/184
Inventor 邱雄鹰智林杰宁静
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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