Isothermal co-emitter lateral sige heterojunction bipolar transistor

Abstract

The invention discloses an isothermal co-emitter region lateral SiGe heterojunction bipolar transistor. The transistor has only one Si emitter region (24) and a plurality of Si collector regions (22) and SiGe base regions (23) in equal numbers to form a transistor in which a plurality of sub-transistors share one emitter region. The Si collector region (22) and the SiGe base region (23) of each sub-transistor are symmetrically distributed with the Si emitter region (24) as the center of symmetry, which will help reduce the thermal coupling between the sub-transistors and improve the performance of each sub-transistor. The heat dissipation capability of the sub-transistors, thereby reducing the thermal resistance of each sub-transistor, achieves the purpose of isothermal distribution of the transistors. Compared with conventional lateral SiGe heterojunction bipolar transistors, under the same ambient temperature, operating voltage and total collector current, the thermal resistance of each sub-transistor in the transistor is smaller, the peak junction temperature is lower, and The temperature distribution and current distribution of the transistor are more uniform, thereby facilitating thermally stable operation of the transistor.

Description

technical field [0001] The invention relates to a lateral silicon germanium (SiGe) heterojunction bipolar transistor (HBT), in particular to a lateral SiGeHBT with isothermal co-emitting region applied in the fields of microwave power devices such as wireless communication, radar and electronic countermeasures, military equipment and medical electronics. Background technique [0002] Silicon-on-insulator (SOI) SiGe HBTs have the advantages of low substrate parasitic capacitance, low leakage current, and good high-frequency characteristics. Compatibility and other advantages will play an increasingly important role in the microwave power field. [0003] Lateral SiGe HBTs usually use multiple sub-transistors in parallel (ie, multiple Si emitter regions, SiGe base regions and Si collector regions are alternately arranged) structure to obtain greater current handling capability. figure 1 Illustrated top and cross-sectional structural schematic diagrams of a conventional lateral...

AI Technical Summary

Problems solved by technology

However, for lateral SiGe HBTs using SOI technology, the collector junction as a heat source is vertically distributed to the Si substrate as a heat dissipation channel, which is not conducive to heat dissipation through the Si substrate

Therefore, the lateral SiGe HBT has a larger thermal resistance and a higher junction temperature

In addition, due to the thermal coupling between the multiple collector junctions of the lateral SiGe HBT, the temperature distribution of the device will be uneven, which will further aggravate the thermal problem of the device and cause the performance of the device to degrade

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