Circuit and method used for generating CMOS (Complementary Metal-Oxide-Semiconductor Transistor) VTH (threshold voltage)

Abstract

The invention discloses a circuit used for generating CMOS (Complementary Metal-Oxide-Semiconductor Transistor) VTH (threshold voltage), and mainly solves the problems of complex structure and high power consumption of the threshold voltage generation circuit of an existing CMOS field effect tube. The circuit comprises a loop formed by five same MOS (Metal Oxide Semiconductor) tubes, a MOS tube M6capable of generating threshold value on the basis of two pieces of VGS gate source voltages, and a MOS tube M7 used for enabling the MOS tube M6 to be positioned in a saturation region same with a MOS tube M5. Through the above design, the circuit has a simple structure, a plurality of same MOS tubes are used for forming the loop, the gate source voltage based on two MOS tubes is subtracted, anda current relationship between two same MOS tubes is regulated to obtain the threshold voltage. In addition, the circuit does not need to stabilize a result by an operational amplifier, a circuit structure is simplified, the integral power consumption of the circuit is lowered, and therefore, the circuit has high use value and promotion value.

Description

technical field [0001] The present invention relates to the technical field of integrated circuits, in particular to a circuit and method for generating a CMOS threshold voltage VTH. Background technique [0002] The threshold voltage of CMOS field effect transistor is an important parameter in CMOS circuit design. Under certain process conditions, the threshold voltage is related to the process angle and has a nonlinear negative temperature coefficient. Therefore, it is not necessary to be an independent voltage in general. produce. However, in some special applications, it is necessary to obtain the threshold voltage. These special applications include: judging the process angle of the CMOS field effect transistor, generating a voltage or current with a special temperature coefficient, generating a low-temperature drift clock ring oscillator, and so on. [0003] However, the loop compensation of the threshold voltage generation circuit of the existing CMOS field effect tr...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a circuit and method for generating CMOS threshold voltage VTH, which mainly solves the problems of complex structure and high power consumption of the existing CMOS field effect transistor threshold voltage generation circuit

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