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A kind of dibenzofuran host material and its preparation method and application

A technology of dibenzofuran and host materials, which is applied in the direction of luminescent materials, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., and can solve the problems of long lifetime of excited state excitons, concentration quenching effect of luminescent materials, lack of etc.

Active Publication Date: 2021-05-14
北京燕化集联光电技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the relatively long lifetime of excited state excitons of transition metal complexes, and the concentration quenching effect of light-emitting materials is prone to occur, resulting in unnecessary triplet-triplet state (T1-T1) quenching in the actual operation of the device, To overcome this problem, researchers often dope triplet emitters into organic host materials
In recent years, there have been few efficient phosphorescent devices, mainly due to the lack of host materials with both good carrier transport properties and high triplet energy levels.

Method used

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  • A kind of dibenzofuran host material and its preparation method and application
  • A kind of dibenzofuran host material and its preparation method and application
  • A kind of dibenzofuran host material and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0065] Synthesis of (Compound I-6-2)

[0066] The synthetic route is as follows:

[0067]

[0068] Synthesis of compound I-6-2

[0069] A 500 ml three-necked flask was equipped with a magnetic stirrer. After nitrogen replacement, 19.93 g (0.188 mol) of sodium carbonate, 28.91 g (4-(diphenylamino)phenyl) boric acid (99% purity, 0.1 mol) and 100 ml of toluene were sequentially added. After nitrogen replacement again, 0.23 g of bistriphenylphosphine palladium dichloride was sequentially added. After the addition, the temperature was raised to 80°C. Start to drop a solution consisting of 39.17 g of compound A (purity 99%, 0.15 mol) and 100 ml of toluene, and control the temperature at 80-100°C. Cool down to room temperature, add 100m deionized water for hydrolysis, stir for 10 minutes, filter, and boil the filter cake several times with DMF to obtain 38.29g of white product with a purity of 99% and a yield of 80%.

[0070] Product MS (m / e): 425.52; Elemental analysis (C ...

Embodiment 2

[0072] Synthesis of (Compound I-8-2)

[0073] The synthetic route is as follows:

[0074]

[0075] Synthesis of compound I-8-2

[0076] 500ml three-neck flask, equipped with magnetic stirring, after nitrogen replacement, add 19.93g (0.188mol) of sodium carbonate, (4-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl ) boric acid 35.3g (purity 99%, 0.1mol) and toluene 100ml. After nitrogen replacement again, 0.23 g of bistriphenylphosphine palladium dichloride was sequentially added. After the addition, the temperature was raised to 80°C. Start to drop a solution consisting of 39.17 g of compound A (purity 99%, 0.15 mol) and 100 ml of toluene, and control the temperature at 80-100°C. Cool down to room temperature, add 100m deionized water for hydrolysis, stir for 10 minutes, filter, and boil the filter cake several times with DMF to obtain 44.55g of white product with a purity of 99% and a yield of 91%.

[0077] Product MS (m / e): 489.57; Elemental analysis (C 33 h 23 N 3 O): ...

Embodiment 3

[0079] Synthesis of (Compound I-4-2)

[0080] The synthetic route is as follows:

[0081]

[0082] Synthesis of compound I-4-2

[0083] 500 ml three-necked flask equipped with a magnetic stirrer, after nitrogen replacement, 19.93 g (0.188 mol) of sodium carbonate, 21.10 g (purity 99%, 0.1 mol) of (9H-carbazol-3-yl) boric acid and 100 ml of toluene were added successively. After nitrogen replacement again, 0.23 g of bistriphenylphosphine palladium dichloride was sequentially added. After the addition, the temperature was raised to 80°C. Start to drop a solution consisting of 39.17 g of compound A (purity 99%, 0.15 mol) and 100 ml of toluene, and control the temperature at 75-80°C. Cool down to room temperature, add 100m deionized water for hydrolysis, stir for 10 minutes, filter, and boil the filter cake several times with DMF to obtain 37.69g of white product with a purity of 99% and a yield of 89%.

[0084] Product MS (m / e): 423.50; Elemental analysis (C 31 h 21 NO...

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Abstract

The present invention relates to a dibenzofuran host material, which has the structure shown in general formula I. The new host material provided by the present invention is centered on dibenzofuran. Since dibenzofuran is a better electron transport unit, the material has both hole transport properties and electron transport properties, realizing hole transport in the light-emitting layer. It is balanced with electron transmission; it also has a higher triplet energy level, which effectively prevents energy from being transferred back to the host material during the luminescence process, thereby improving its luminous efficiency.

Description

technical field [0001] The invention relates to the technical field of organic electroluminescent display, in particular to a novel organic material and its application in organic electroluminescent devices. Background technique [0002] The application of organic electroluminescent (OLED) materials in information display materials, organic optoelectronic materials and other fields has great research value and bright application prospects. With the development of multimedia information technology, the performance requirements of flat panel display devices are getting higher and higher. At present, the main display technologies include plasma display devices, field emission display devices and organic electroluminescent display devices (OLED). Among them, OLED has a series of advantages such as self-luminescence, low-voltage DC drive, full curing, wide viewing angle, and rich colors. Compared with liquid crystal display devices, OLED does not require a backlight, has a wider...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C07D405/04C07D405/14C07D471/04C07D405/10C07D307/91C09K11/06H01L51/50H01L51/54
CPCC07D405/04C07D405/14C07D471/04C07D405/10C07D307/91C09K11/06C09K2211/1007C09K2211/1029C09K2211/1044C09K2211/1088C09K2211/1074H10K85/6572H10K85/6574H10K85/342H10K50/11
Inventor 梁现丽李仲庆杭德余段陆萌班全志李继响程丹丹曹占广黄春雪罗忠林刘阳
Owner 北京燕化集联光电技术有限公司