Structure for embedding high-density laminated capacitor in large-pixel image sensor

Abstract

The invention provides a structure for embedding a high-density laminated capacitor in a large-pixel image sensor. The structure comprises an active region; a photodiode located in the active region;a first interlayer dielectric arranged over the photodiode; and a transfer tube arranged in the first interlayer dielectric above the photodiode. The areas on two sides of the photodiode are in the form of trench isolation areas. The trench isolation areas are provided with laminated capacitors. The laminated capacitors are led out through metal through holes. The laminated capacitor structure formed by stacking high-k dielectric media and metal is utilized, so that wide groove isolation areas around large pixels can be fully utilized to embed laminated capacitors. Therefore, the area and thecost of a chip are saved, and the integration is facilitated. The contradiction that the large capacitor is incompatible with the area of the chip is solved. Therefore, the structure effectively overcomes various defects in the prior art and has high industrial utilization value.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a structure for embedding high-density laminate capacitors in a large-pixel image sensor. Background technique [0002] Driven by the rapid growth of market demand for portable devices in recent years, the integration of various passive components on integrated circuit chips, such as capacitors and sensors, has attracted great attention and investment in research and development. Various passive components have achieved rapid development in terms of miniaturization, high precision, high quality factor, high bandwidth, and low cost in radio frequency, analog / mixed signal, and power applications. Whether it is a picofarad-sized capacitor used for RF matching and filtering, or a nanofarad-sized capacitor widely used in noise decoupling, data sampling and storage functions, it is undoubtedly the most widely used passive component. Nowadays, with the development of integrat...

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a structure for embedding high-density stacked capacitors in a large-pixel image sensor, which is used to solve the problem of embedding the capacitor structure added in the prior art into the back-end process , will greatly increase the chip area, and at the same time affect the problem of photodiode lighting efficiency

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