Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Shellac viscose, preparation method of shellac viscose and preparation method of bismuth telluride crystal grains

A technology of bismuth telluride and shellac, applied in the field of materials, can solve the problems of low preparation efficiency of semiconductor bismuth telluride crystal grains, easy generation of burrs, low cutting speed, etc., to achieve low cost, reduce burr generation, and improve quality and precision. Effect

Inactive Publication Date: 2019-11-05
宜宾红星电子有限公司
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] At present, when preparing small-sized semiconductor bismuth telluride grains, small-sized semiconductor bismuth telluride grains usually refer to those whose length and width are both less than 2mm. Due to the low mechanical strength of the raw material bismuth telluride wafer itself, it is easy to be stressed. Fragmentation, it is easy to produce burrs or even breakage during the cutting process on the cutting machine, and only one bismuth telluride wafer can be cut at a time, and the cutting speed is also low, resulting in low preparation efficiency of small-sized semiconductor bismuth telluride grains, which affects its use

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0025] The preparation method of above-mentioned shellac viscose comprises the steps:

[0026] a, prepare the raw materials, according to the mass percentage, the shellac content is 40-44%, the dibutyl phthalate content is 7-9%, the diisooctyl phthalate content is 11-13%, and the talcum powder content is 35- 38% prepare raw materials;

[0027] b. Place the raw materials prepared in step a in a heating container for heating and melting, and stir with a smooth stir bar after melting;

[0028] c. Pour the mixed material evenly stirred in step b into a cooling container and cool to room temperature.

[0029] In step a, the shellac is preferably natural grade A shellac. In step b, the heating container is preferably a crucible, the heating and melting temperature of the raw material is 270-280° C., and the stirring is preferably a smooth glass rod. The cooling container is preferably a glass dish. The preparation method of the shellac viscose is simple in operation, the require...

Embodiment 1

[0041] A method for preparing bismuth telluride grains with a size of 2.1mm×1mm×1mm in the shape of a cuboid, wherein 2.1mm is the thickness, and 1mm is the length and width, comprising the following steps:

[0042]A. Prepare the base, 10 bismuth telluride wafers, and 8mm thick graphite pads. The shape of the bismuth telluride wafer is a cuboid, with a thickness of 2.1mm, a length of 10mm, and a width of 10mm;

[0043] B. The base, the bismuth telluride wafer, and the graphite pad are placed on a heating platform with a temperature of 235°C for heating, and the base and all the bismuth telluride wafers are stacked together from bottom to top through shellac adhesive bonding. After connecting, cool to room temperature for later use.

[0044] C, carry out cutting, at first base is stacked together, and all bismuth telluride wafers are fixed on the inner circle cutting machine and carry out the first side cutting, obtain semi-bismuth telluride grain, the length of semi-bismuth te...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Widthaaaaaaaaaa
Lengthaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of materials, in particular to a shellac viscose, a preparation method of the shellac viscose and a preparation method of bismuth telluride crystal grains.The shellac viscose is prepared from, by mass, 40-44% of shellac, 7-9% of dibutyl phthalate, 11-13% of di(2-ethylhexyl)phthalate and 35-38% of talcum powder. Through the shellac viscose with high bonding strength, it is guaranteed that when multiple bismuth telluride wafers are bonded to be cut, the bismuth telluride wafers cannot deviate or be broken, and the prepared bismuth telluride crystal grains are good in size consistency and high in finished product rate; through a one-time preparation process, preparation of multiple bismuth telluride crystal grains can be completed, the efficiencyof preparing the bismuth telluride crystal grains is obviously improved, and the preparation cost of the bismuth telluride crystal grains is lowered; a cutting cutter seam formed during first face cutting is immersed in the fused shellac viscose, burrs can be reduced, and the preparation quality and precision are improved.

Description

technical field [0001] The invention relates to the technical field of materials, in particular to a shellac viscose, a preparation method of the shellac viscose and a preparation method of bismuth telluride grains. Background technique [0002] At present, when preparing small-sized semiconductor bismuth telluride grains, small-sized semiconductor bismuth telluride grains usually refer to those whose length and width are both less than 2 mm. Due to the low mechanical strength of the raw material bismuth telluride wafer itself, it is easy to be stressed. Fragmentation, it is easy to produce burrs or even breakage during the cutting process on the cutting machine, and only one bismuth telluride wafer can be cut at a time, and the cutting speed is also low, resulting in very low preparation efficiency of small-sized semiconductor bismuth telluride grains, which affects its use. Contents of the invention [0003] The technical problem to be solved by the present invention is...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C09J193/02C09J11/04C09J11/06B28D5/00
CPCB28D5/00C08K2201/014C09J11/04C09J11/06C09J193/02C08K5/12C08K3/34
Inventor 陶德才段冰尚华
Owner 宜宾红星电子有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com