Unlock instant, AI-driven research and patent intelligence for your innovation.

otp storage device, manufacturing method thereof, and electronic device

A storage device and manufacturing method technology, applied in semiconductor devices, electric solid state devices, circuits, etc., can solve the problems of reducing product yield and reliability, device failure, etc., to improve yield and reliability, and avoid device failure. Effect

Active Publication Date: 2021-07-20
CSMC TECH FAB2 CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, such an OTP memory deposited with a barrier layer is prone to device failure due to contact hole bridging (bridge), which reduces the yield and reliability of the product.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • otp storage device, manufacturing method thereof, and electronic device
  • otp storage device, manufacturing method thereof, and electronic device
  • otp storage device, manufacturing method thereof, and electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] image 3 A schematic layout of an OTP memory device according to an embodiment of the present invention is shown. like image 3 As shown, according to this embodiment the OTP storage device includes:

[0050] A semiconductor substrate, in which an active region AA and an isolation structure extending along a first direction are formed, the active region AA and the isolation structure are arranged at intervals along a second direction, and the first direction and the second direction are perpendicular to each other.

[0051] Wherein, the semiconductor substrate can be at least one of the materials mentioned below: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP or other III / V compound semiconductors, including multilayers composed of these semiconductors The structure or the like may be silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator (S-SiGeOI), silicon-germanium-on-insulator (SiGeOI), and germanium-on-insulator (GeOI). In this embod...

Embodiment 2

[0058] Figure 4 A flow chart showing the steps of the manufacturing method of the OTP storage device according to the embodiment of the present invention.

[0059] like Figure 4 As shown, the present embodiment discloses a manufacturing method of an OTP storage device, including:

[0060] Step 401, providing a semiconductor substrate, forming an active region and an isolation structure extending along a first direction in the semiconductor substrate, the active region and the isolation structure are arranged at intervals along a second direction, and the first the direction and the second direction are perpendicular to each other;

[0061] Step 402, forming memory cells on the active region, each of the memory cells includes a gate transistor and a memory transistor connected in series, and the adjacent memory cells on the same active region are formed along a second direction. Mirrored arrangement, and have a common bit line and source line, a floating gate extending alo...

Embodiment 3

[0086] Still another embodiment of the present invention provides an electronic device, including an OTP storage device and an electronic component connected to the OTP storage device. Wherein, the OTP storage device includes: a semiconductor substrate, in which an active region and an isolation structure extending along a first direction are formed, and the active region and the isolation structure are arranged at intervals along a second direction , the first direction and the second direction are perpendicular to each other; memory cells are formed on the active region, each of the memory cells includes a gate transistor and a memory transistor connected in series, and the same active region is The adjacent memory cells are arranged in a mirror image along the second direction, and have a common bit line and source line, and a floating gate extending along the second direction is formed on both sides of each bit line, and each of the A selection gate extending along the sec...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides an OTP storage device, its manufacturing method, and electronic device, including: a semiconductor substrate, in which an active region and an isolation structure extending along a first direction are formed, and in the active region A number of memory cells are formed on the same active region, and the adjacent memory cells on the same active region are arranged in a mirror image; a barrier layer is also formed on the semiconductor substrate, and the barrier layer includes a first layer extending along the second direction. a covering part and a second covering part extending along the first direction, the first covering part covers the floating gates on the same line and the isolation structure between adjacent floating gates, the first covering part Two covering parts cover the isolation structure between the adjacent bit lines. The OTP storage device according to the present invention can avoid the problem of device failure caused by the bridging and interconnection of adjacent bit line contact holes, thereby improving the yield rate and reliability of the device. The manufacturing method of the OTP storage device and the electronic device have similar advantages.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an OTP storage device, a manufacturing method thereof, and an electronic device. Background technique [0002] OTP (one time Programmable, one-time programmable) memory is a commonly used non-volatile memory, which can be realized by various structures, such as coupling capacitor type, series transistor type, and dielectric breakdown type. The serial transistor type OTP memory is a commonly used OTP memory due to its advantages of small area and low cost. like figure 1 As shown, the storage unit (cell) of the series-transistor type OTP memory is composed of two series-connected PMOS devices, one of which is used as a selection transistor, and the other is used as a storage transistor for storing data, and the gate corresponding to the selection transistor is a selection gate SG ( Select gate), the gate corresponding to the storage tube is a floating gate FG (floating Gat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/112
CPCH10B20/30H10B20/20
Inventor 孙晓峰秦仁刚盛拓
Owner CSMC TECH FAB2 CO LTD