A trench type semiconductor power device terminal protection structure and power device
A terminal protection structure and power device technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of weakening the withstand voltage capacity of the terminal protection structure and increasing the electric field intensity of the side wall of the oxide layer, so as to achieve the reduction of potential influence, Effects of increased cost and improved reverse withstand voltage capability
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0026]A trench-type semiconductor power device terminal protection structure, comprising: a first conductivity type substrate 1, a first conductivity type buffer layer 2 is provided on the first conductivity type substrate 1, and a first conductivity type buffer layer 2 is disposed on the first conductivity type buffer layer 2 A drift region 3 of the first conductivity type is provided, a primitive cell region 19 is arranged in the drift region 3 of the first conductivity type, a main voltage divider ring 4 is arranged outside the primitive cell region 19, and at least A sub-voltage divider ring 5, a cut-off ring 6 of the first conductivity type is provided outside the outermost sub-voltage divider ring 5, and a second conductivity type is provided under the main voltage divider ring 4 and each sub-voltage divider ring 5 respectively. The shielding protection layer 10 is covered with an oxide layer on the surface of the drift region 3 of the first conductivity type, between the...
Embodiment 2
[0028] Embodiment 2 differs from Embodiment 1 only in the position of the well region 12 of the second conductivity type, namely: the second conductive well region 12 located between the main voltage divider ring 4 and the secondary voltage divider ring 5 adjacent to the main voltage divider ring 4 The type well region 12 and the sub-voltage divider ring 5 therein are isolated by the first conductivity type drift region 3, and the second conductivity type well region 12 located between adjacent sub-voltage divider rings 5 is isolated from the adjacent sub-voltage divider ring 5 The outer secondary voltage divider rings 5 are isolated by the drift region 3 of the first conductivity type.
Embodiment 3
[0030] A trench type semiconductor power device, comprising: a trench type semiconductor power device terminal protection structure, the trench type semiconductor power device terminal protection structure comprising: a first conductivity type substrate 1, a first conductivity type substrate 1 The buffer layer 2 of the first conductivity type is provided on it, the drift region 3 of the first conductivity type is arranged on the buffer layer 2 of the first conductivity type, and the original cell region 19 is arranged in the drift region 3 of the first conductivity type, and the original cell region 19 A main voltage divider ring 4 is provided on the outside of the main voltage divider ring 4, and at least one secondary voltage divider ring 5 is provided outside the main voltage divider ring 4, and a first conductivity type cut-off ring 6 is provided outside the outermost secondary voltage divider ring 5. The second conductive type shielding protection layer 10 is respectively ...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com