Leakage current test structure of 3D magnetic sensor and its forming method
A magnetic sensor and test structure technology, applied in semiconductor/solid-state device testing/measurement, magnetic field controlled resistors, circuits, etc., can solve the problems of magnetoresistance performance degradation, top metal layer leakage, etc.
Active Publication Date: 2021-05-25
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
However, in the prior art, due to the stability and uniformity of the fabrication, leakage may occur between the magnetoresistive layer and the top metal layer of the CMOS device, which eventually leads to a decrease in the magnetoresistance performance.
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[0024] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0025] The inventors found that in the prior art method for forming a 3D magnetic sensor, titanium and aluminum may be sputtered out when the magnetoresistive layer is etched, resulting in communication between the magnetoresistive layer and the top metal layer of the CMOS device, resulting in leakage. Therefore, A test structure capable of detecting leakage is required.
[0026] refer to figure 1 , the present invention provides a method for forming a leakage current test structure of a 3D magnetic sensor, com...
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The invention provides a leakage current testing structure of a 3D magnetic sensor and a forming method thereof, comprising: providing a top metal layer of a CMOS device; forming a silicon dioxide layer on the top metal layer of a CMOS device, and forming a silicon dioxide layer in the silicon dioxide layer forming a first trench; depositing a first layer of silicon nitride to cover the silicon dioxide layer and the first trench; depositing a magnetoresistive layer to cover the first layer of silicon nitride; depositing tantalum nitride to cover the Magnetoresistive layer; sequentially etch part of the tantalum nitride and magnetoresistive layer to expose the first layer of silicon nitride; deposit the second layer of silicon nitride to cover the first layer of silicon nitride and the remaining tantalum nitride; etch the first trench The second layer of silicon nitride at the bottom of the groove exposes the surface of the top metal layer of the CMOS device to form a first through hole, and etches the remaining second layer of silicon nitride to expose the magnetoresistive layer to form a second through hole; deposit a metal layer, etch nitrogen A portion of the metal layer on the tantalum oxide forms a first test bond and a second test bond. The magnetoresistive layer and the top metal layer of CMOS devices can be tested for leakage.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a leakage current testing structure of a 3D magnetic sensor and a forming method thereof. Background technique [0002] A magnetic sensor is a device that can convert various magnetic fields and their changes into electrical signal output. Magnetic sensors include giant magnetoresistive sensors (G ia n t Mag ne to R es is ti ve Sens o r, GMR), anisotropic Magnetic resistance sensor (Anisotropic Magneto Resistive Sensor, AMR), etc. Taking the anisotropic magnetoresistive sensor as an example, the nickel-iron alloy layer is used as the magnetoresistive layer. When an external magnetic field is applied to the magnetoresistive layer, the magnetic domains of the magnetoresistive layer rotate, causing the resistance of the magnetoresistive layer to change, and the change in the resistance of the magnetoresistive layer is reflected in the change of the output voltage to achieve ...
Claims
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IPC IPC(8): H01L23/544H01L43/08H10N50/10
CPCH01L22/30H01L22/32H10N50/10
Inventor 时廷
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP