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Silicon carbide composite material and preparation method therefor

A composite material and silicon carbide technology, applied in the field of silicon carbide composite materials and their preparation, can solve problems such as limiting the scope of use, and achieve the effects of ensuring density, reducing costs, and reducing material costs

Inactive Publication Date: 2019-11-15
湖南太子新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to SiO 2 Actively volatilizes at high temperature and low oxygen partial pressure. Therefore, the current use temperature of most silicon carbide is about 1700°C, which limits its application range. It is necessary to develop new methods to prepare silicon carbide and increase its active-passive oxidation conversion temperature. Increase the use temperature of silicon carbide to obtain high-temperature resistant, oxidation-resistant, and low-cost silicon carbide materials

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] The invention discloses a silicon carbide composite material, which comprises: 80% of silicon carbide powder, 15% of potassium acetylacetonate and 5% of polymethyl silicone resin in terms of mass fraction. The particle size of the silicon carbide powder was 100 μm.

[0031] The preparation method of the above-mentioned silicon carbide composite material comprises the following steps:

[0032] Step 1. Ultrasonic treatment is performed on 80% of silicon carbide powder, 15% of potassium acetylacetonate and 5% of polymethyl silicone resin. The frequency of ultrasonic treatment is 100KHz, and the ultrasonic time is 1h;

[0033] Step 2, put the homogeneously mixed raw materials into the cross-linking cracking furnace, under the protection of argon, raise the temperature of the cross-linking cracking furnace from 200°C to 1000°C at a heating rate of 1°C / min, and Insulate at 1000°C for 2 hours;

[0034] Step 3, ball milling the solid material obtained by cross-linking crackin...

Embodiment 2

[0038] The invention discloses a silicon carbide composite material, which comprises: 70% of silicon carbide powder, 20% of potassium isopropoxide and 10% of polyethyl silicone resin in terms of mass fraction. The particle size of the silicon carbide powder was 50 μm.

[0039] The preparation method of the above-mentioned silicon carbide composite material comprises the following steps:

[0040] Step 1. According to the mass fraction, 70% of silicon carbide powder, 20% of potassium isopropoxide and 10% of polyethyl silicone resin are subjected to ultrasonic treatment, the frequency of ultrasonic treatment is 100KHz, and the ultrasonic time is 1h;

[0041] Step 2, put the homogeneously mixed raw materials into the cross-linking cracking furnace, under the protection of argon, raise the temperature of the cross-linking cracking furnace from 200°C to 1000°C at a heating rate of 2°C / min, and Insulate at 1000°C for 3 hours;

[0042] Step 3, ball milling the solid matter obtained ...

Embodiment 3

[0046] The invention discloses a silicon carbide composite material, which comprises, by mass fraction: 60% of silicon carbide powder, 30% of potassium acetylacetonate, and 10% of 3-methacryloyloxypropyltris(trimethylsiloxy)silane. %. The particle diameter of the silicon carbide powder was 20 μm.

[0047] The preparation method of the above-mentioned silicon carbide composite material comprises the following steps:

[0048] Step 1, 60% of silicon carbide powder, 30% of potassium acetylacetonate and 10% of 3-methacryloyloxypropyl tris(trimethylsiloxy)silane are subjected to ultrasonic treatment, and the frequency of ultrasonic treatment is 100KHz , the ultrasonic time is 1h;

[0049] Step 2, put the homogeneously mixed raw materials into the cross-linking cracking furnace, under the protection of argon, raise the temperature of the cross-linking cracking furnace from 200°C to 1000°C at a heating rate of 1.5°C / min, and Keep warm at 1000℃ for 2.5h;

[0050] Step 3, ball milling...

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Abstract

The invention discloses a silicon carbide composite material. The silicon carbide composite material comprises the following ingredients in parts by mass: 60% to 80% of silicon carbide powder, 10% to30% of organic metal salt and 1% to 15% of binder. The invention further discloses a preparation method for the silicon carbide composite material. The method comprises the steps: subjecting the silicon carbide powder, the organic metal salt and the binder to ultrasonic treatment; placing the uniform-mixed raw materials in a cross-linking pyrolyzer, heating the temperature of the cross-linking pyrolyzer to 200 DEG C to 1,000 DEG C at a heating rate of 1 DEG C / min to 2 DEG C / min under argon shield, and carrying out heat preservation for 2 to 3 hours at the temperature of 1,000 DEG C; subjectinga solid matter obtained through cross-linking pyrolysis to ball milling; and placing the solid matter obtained through ball milling into a high-temperature heat-treatment furnace under argon shield,thereby obtaining the silicon carbide composite material. The silicon carbide composite material prepared by the method has the advantages of excellent corrosion resistance, heat conducting efficiencyand oxidation resistance, and the cost is reduced effectively.

Description

technical field [0001] The invention relates to the technical field of silicon carbide materials, more specifically, the invention relates to a silicon carbide composite material and a preparation method thereof. Background technique [0002] Silicon carbide (SiC) ceramics have excellent properties such as small thermal expansion coefficient, high decomposition temperature, low density, high high-temperature strength, corrosion resistance, wear resistance, and ablation resistance, and are the most promising high-temperature structural materials used above 1300 °C One of them, widely used in heat-resistant, wear-resistant and harsh environments. [0003] Oxidation occurs when SiC ceramics are used at high temperatures, and the oxidation mechanism is divided into active oxidation and passive oxidation. Active oxidation occurs at high temperature and low oxygen partial pressure, and SiC material is oxidized to generate volatilized SiO, resulting in a reduction in material qual...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/565C04B35/571C04B35/622
CPCC04B35/565C04B35/571C04B35/622C04B2235/3201C04B2235/5427C04B2235/5436C04B2235/6562C04B2235/6567C04B2235/77C04B2235/9692
Inventor 刘骏刘振华张海
Owner 湖南太子新材料科技有限公司
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