High-power semiconductor laser array wavelength locking and line width compression device and method

Abstract

The invention discloses a high-power semiconductor laser array wavelength locking and line width compression device and a method. The device comprises a semiconductor laser array, a beam shaping system, a partial reflection mirror and a dispersion optical element. The laser emitted by each bar of the semiconductor laser array is collimated by the corresponding beam shaping system and then output in parallel. The parallel laser beams are respectively incident to the corresponding partial reflectors. One part of light in each laser beam is reflected by the corresponding partial reflector, then is sequentially reflected by other subsequent partial reflectors of the reflection light path and finally enters the dispersion optical element; diffracted light returns along an original path and enters each bar of the semiconductor laser array again after being reflected by each partial reflector, and each bar, the light beam shaping system corresponding to each bar, part of reflectors and the dispersion optical element form an external cavity structure together. According to the method, strict consistency of emergent wavelengths of different light emitting sources can be ensured, and accurate wavelength locking and ultra-narrow linewidth spectrum output are easy to realize.

Description

technical field [0001] The invention belongs to the technical field of lasers, and in particular relates to a novel high-power semiconductor laser array wavelength locking and line width compression device and method. Background technique [0002] With its high electro-optic conversion efficiency (usually ≥ 60%), light and compact volume structure, wide band coverage (0.6-2um) and scalable high power output capability (kW ~ 100kW), semiconductor lasers are widely used in industry and national defense. It has important applications in fields such as scientific research and medical treatment. [0003] The wavelength of the emitted laser light of conventional semiconductor lasers has a certain deviation (±3nm) from the nominal value, and the center wavelength will drift with the change of driving current and temperature, usually in the range of 0.2-0.3nm / A (nm / K), Its typical emission spectrum linewidth is 3-5nm (FWHM), and the above indicators can generally meet the applicati...

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Problems solved by technology

Such a structure greatly increases the complexity of the system and seriously restricts its power expansion capability

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