Supercharge Your Innovation With Domain-Expert AI Agents!

Bulk acoustic wave resonator integrating fish scale mirror array and processing method thereof

A technology of bulk acoustic wave resonators and mirror arrays, applied in impedance networks, electrical components, etc., can solve the problems of large anchor loss, low quality factor, difficult application, etc., and achieve reduced mechanical reliability, reduced acoustic waves, and good performance. Effect

Inactive Publication Date: 2020-10-09
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problems of large anchor point loss, low quality factor and difficulty in practical application of BAW resonators in the prior art, and propose a BAW resonator with an integrated fish-scale reflector array and Its processing method can effectively reduce the anchor point loss of the bulk acoustic wave resonator and improve the quality factor and reliability of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bulk acoustic wave resonator integrating fish scale mirror array and processing method thereof
  • Bulk acoustic wave resonator integrating fish scale mirror array and processing method thereof
  • Bulk acoustic wave resonator integrating fish scale mirror array and processing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] An embodiment of the present invention provides a bulk acoustic wave resonator integrated with a fish-scale reflector array, such as figure 1 and figure 2 As shown, it includes a SOI (Silicon-On-Insulator, silicon on insulator) substrate 1, an input electrode disk 2 located on the top of the SOI substrate 1, an output electrode disk 3, and a ground electrode disk 4, and is fixed and suspended on the SOI by a support beam 5. The resonator 6 at the center of the substrate 1, the fish scale mirror array 7 is integrated on both sides of the resonator 6; the input electrode disk 2 and the output electrode disk 3 are symmetrically arranged on both sides of the top of the SOI substrate 1, and the input electrode disk 2 and the output electrode disk Both sides of the electrode plate 3 are symmetrically provided with the ground electrode plate 4; the resonator 6 is suspended in the middle of the SOI substrate 1 by the support beam 5, and the interdigitated electrodes on the top...

Embodiment 2

[0054] An embodiment of the present invention provides a method for processing a bulk acoustic wave resonator integrated with a scale mirror array, such as Figure 7 As shown, the following steps S1-S9 are included:

[0055] S1. Select an SOI wafer with a crystal orientation, and set the top layer doped silicon with a thickness of 10±1 μm, the first buried oxide layer with a thickness of 1±0.05 μm, and the back layer with a thickness of 400±5 μm from top to bottom. Substrate silicon, get SOI substrate.

[0056] S2. Doping phosphorus into the doped silicon on the top layer of the SOI substrate to form a conductive layer, which serves as the ground layer of the entire bulk acoustic wave resonator.

[0057] S3, performing thermal oxidation on the top doped silicon to form 2000A 0 silicon dioxide, and obtain the second buried oxide layer of the contact part between the electrode plate and the top-layer doped silicon and the contact part between the metal wiring and the top-laye...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a bulk acoustic wave resonator integrated with a scale-shaped reflector array and a processing method thereof. The bulk acoustic wave resonator includes an SOI substrate, an input electrode disk located at the top of the SOI substrate, an output electrode disk, and a ground electrode disk, and The resonator is fixed and suspended at the center of the SOI substrate by the support beam, and fish-scale reflector arrays are integrated on both sides of the resonator; the input electrode disk and the output electrode disk are symmetrically arranged on both sides of the top of the SOI substrate, and the input electrode disk and the output electrode disk Both sides of the electrode disk are symmetrically provided with ground electrode disks; the fish-scale reflector array is composed of four rows of reflectors arranged in a staggered manner, and integrated at the ends of both sides of the resonator. The invention solves the problems of large anchor point loss and low quality factor existing in the existing bulk acoustic wave resonator, and is beneficial to realize its application in low phase noise oscillators, narrow-band filters and high-precision sensors.

Description

technical field [0001] The invention belongs to the technical field of radio frequency micro-electromechanical systems, and in particular relates to the design of a bulk acoustic wave resonator integrating fish-scale reflector arrays and a processing method thereof. Background technique [0002] Micro-Electro-Mechanical System (MEM) is a revolutionary new technology, showing broad application prospects in many fields due to its miniaturization and high integration. MEMS resonators are an important application of MEMS technology in the radio frequency field. MEMS resonators with small size, low power consumption, high performance and the ability to integrate with CMOS (Complementary Metal Oxide Semiconductor) circuits are expected to drive the development of a new generation of highly integrated electronic devices . Compared with traditional electrical resonant devices, MEMS resonators based on acoustic theory can greatly reduce the size of the circuit, because the size of t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03H3/02H03H9/02
CPCH03H3/02H03H9/02007
Inventor 宋亚梅周鑫鲍景富鲍飞鸿张翼吴兆辉
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com