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A High Voltage Transient Voltage Suppressor Diode

A transient voltage suppression, diode technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of small breakdown voltage, lack of chip area, etc., to improve the breakdown current density and reduce the chip area. , The effect of improving the surge absorption capacity

Active Publication Date: 2021-06-01
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Traditional TVS is mostly used for electrostatic discharge protection, and its breakdown voltage is small
However, high breakdown voltage TVS diodes play an important protective role in circuit systems such as power circuits and LED lighting circuits. At present, there are few studies on high-voltage TVS diodes. How to increase the breakdown current density of high-voltage TVS diodes to reduce the chip area is even more important. is lacking

Method used

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  • A High Voltage Transient Voltage Suppressor Diode
  • A High Voltage Transient Voltage Suppressor Diode
  • A High Voltage Transient Voltage Suppressor Diode

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Embodiment

[0036] In this embodiment, the device structure is as Figure 4 As shown, the P-type doped region 1 has a depth of 9.5 μm and a doping concentration of 1×10 18 cm -3 , where the lateral diffusivity of the graded junction is 1, and the characteristic length is 0.2 μm; the depth of the N-type doped region 2 is 69 μm, and the doping concentration is 2.87×10 15 cm -3 ; The depth of the N-type lightly doped epitaxial layer 7 is 20.5 μm, and the doping concentration is 1×10 14 cm -3 The depth of the trench (the comb-like structure of the first metal cathode 4) is 9 μm, the width is 2 μm, and the distance between adjacent trenches is 4 μm; the P-type implantation region 5 is covered above the comb-like structure of the first metal cathode 4 The thickness is 1 μm, and the thickness covered on its sides and bottom is 0.5 μm, such as figure 2 As shown, the doping concentration is 1×10 18 cm -3 ; The thickness of the metal anode 3 is 0.5 μm; the thickness of the bottom of the fir...

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Abstract

A high-voltage transient voltage suppression diode belongs to the technical field of semiconductor devices. including a doped region of the first conductivity type, a doped region of the second conductivity type located below the doped region of the first conductivity type, a lightly doped epitaxial layer of the second conductivity type located below the doped region of the second conductivity type, In the lightly doped epitaxial layer of the conductivity type, the first metal cathode of the comb structure on the side away from the second conductivity type doped region completely covers the first conductivity type injection region on the surface of the first metal cathode, and the second conductivity type The lightly doped epitaxial layer Schottky contacts the second metal cathode, and the metal anode above the doped region of the first conductivity type. The structure of the invention can effectively increase the breakdown current of the diode and improve the performance of the device.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a transient voltage suppression diode. Background technique [0002] From natural phenomena such as lightning to artificially formed various electromagnetic interferences, they will cause serious harm to electronic circuit systems. Therefore, transient voltage suppressor diodes (Transient Voltage Suppressors, TVS for short) are widely used as protection devices. Traditional TVS is mostly used for electrostatic discharge protection, and its breakdown voltage is small. However, high breakdown voltage TVS diodes play an important protective role in circuit systems such as power circuits and LED lighting circuits. At present, there are few studies on high-voltage TVS diodes. How to increase the breakdown current density of high-voltage TVS diodes to reduce the chip area is even more important. is lacking. Contents of the invention [0003] The purpose o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/861H01L21/329
CPCH01L29/6609H01L29/861
Inventor 刘聪孔谋夫陈罕之
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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