Heterogeneous integration method and heterogeneous integrated device of compound semiconductor and silicon-based complementary metal oxide semiconductor wafer

Abstract

The invention relates to the field of semiconductor materials, in particular to a method for heterogeneous integration of compound semiconductors and silicon-based complementary metal oxide semiconductor wafers, comprising: selectively etching the compound semiconductor epitaxial layer to form an etching groove on the compound semiconductor; Form a bonding dielectric layer on the etching surface of the layer and the inner groove wall of the etching groove; coat a thermosetting adhesive layer on the silicon-based substrate; bond the above-mentioned compound semiconductor and silicon-based complementary metal oxide semiconductor wafers; etch The substrate of the compound semiconductor, forming part of the bonding medium layer and the adhesive layer. The etching groove formed by selective etching in the present invention facilitates the discharge of air bubbles in the thermosetting adhesive layer, forms a bonding medium layer on the compound semiconductor, protects the surface of the compound semiconductor, and through the bonding of the thermosetting adhesive layer and the bonding medium layer, Good bonding of the compound semiconductor epitaxial layer and the silicon-based complementary metal oxide semiconductor wafer is realized.

Description

technical field [0001] The invention relates to the field of semiconductor materials, in particular to a heterogeneous integration method and a heterogeneous integration device of a compound semiconductor and a silicon-based complementary metal oxide semiconductor wafer. Background technique [0002] Modern integrated circuits based on silicon-based CMOS technology continue to improve in terms of integration, power consumption, and device characteristics as the feature size of CMOS devices shrinks. On the other hand, compound semiconductor devices and integrated circuits have made great progress in the fields of ultra-high-speed circuits, microwave circuits, terahertz circuits, and optoelectronic integrated circuits. Since silicon-based semiconductor CMOS chips and compound semiconductor semiconductor chips are difficult to produce in the same fab, process compatibility cannot be achieved. However, if the two are organically combined to break through the limited selection of...

AI Technical Summary

Problems solved by technology

Since silicon-based semiconductor CMOS chips and compound semiconductor semiconductor chips are difficult to produce in the same fab, process compatibility cannot be achieved. However, if the two are organically combined to break through the limited selection of devices in the field of integrated circuit design, various materials and devices The problem of not being able to mix and integrate will surely achieve a substantial improvement in integrated circuit design and performance

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