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Flexible gradient strain film, preparation method and application thereof

A strained film and gradient technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of small test space, insufficient placement of tensile fixtures, and inability to have different tensile strains, and achieves a simple preparation process. Easy to use and resource-saving effect

Active Publication Date: 2019-12-27
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the periodic corrugated structure also has its shortcomings. Since the corrugated structure produced is uniform, the wavelength and amplitude are constant, so the tensile strain at all peaks is the same, and the compressive strain at all troughs is also the same. Different values ​​of tensile strain and compressive strain are produced on the same film
In application, if you need to test the influence of different strains on the material, you can stretch or prepare multiple samples with different processes. jig, and the accuracy of the tensile jig is high), the latter requires repeated experiments, which consumes samples and experiment time

Method used

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  • Flexible gradient strain film, preparation method and application thereof
  • Flexible gradient strain film, preparation method and application thereof
  • Flexible gradient strain film, preparation method and application thereof

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Embodiment 1

[0029] A preparation method for a flexible gradient strain film, comprising the following steps:

[0030] Step 1. Use AZ6112 positive resist as a mask, photolithography exposure time 3.5s, development 45s, prepare two isosceles trapezoidal patterns on the surface of the SOI substrate, the two isosceles trapezoids are isosceles trapezoids symmetrical about the upper base , and the two isosceles trapezoids have the same upper base, the upper base b of the structure is 0.080mm long, the lower base a is 0.252mm long, and the height 0.5c of the trapezoid is 0.7165mm;

[0031] Step 2. Use SF 6 with O 2 The mixed gas is used to plasma etch the silicon thin film layer of the SOI substrate, the RIE power is 100W, and the etching time is 60s;

[0032] Step 3. Put the SOI substrate patterned in step 2 into an HF solution with a mass fraction of 40% for etching. After etching, the cured PDMS stamp is closely attached to the SOI substrate and the stamp is lifted, that is The top silicon...

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Abstract

The invention provides a preparation method of a flexible gradient strain film and application of the flexible gradient strain film and belongs to the technical field of nano film preparation. According to the preparation method of the invention, the surface of a silicon film is etched, so that symmetrical isosceles trapezoid structures with a common bottom edge is formed; the silicon film with the pattern is transferred to a preloaded PDMS substrate; and preloading is released, so that a periodic ripple structure with gradient strain can be prepared. The prepared flexible film with the ripplestructure can generate gradient strain; and strain values of different magnitudes can be obtained in the absence of stretching and repeated sample preparation. The flexible film is suitable for strain engineering research in various environments and under various conditions. The flexible film has the advantages of resource-saving performance, simple preparation process and convenient use; and gradient ripples, the same as uniform ripples, have certain tensile resistance.

Description

technical field [0001] The invention belongs to the technical field of nano film preparation, and in particular relates to a flexible gradient strain film and its preparation method and application. Background technique [0002] In recent years, strain engineering has become a hot research field, especially for strain engineering research on emerging two-dimensional materials and thin film materials. Strain engineering mainly regulates and optimizes the physical and chemical properties of materials by generating certain strains on materials. For example, in the field of semiconductors, researchers have found that by applying strain to the silicon substrate, the mobility of MOS devices can be improved, thereby improving the response time of the device; in the field of photovoltaics, applying strain can make the absorption band edge of the material bias In the field of catalysis, studies have found that strain energy increases the active site of a material on a certain crysta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L21/02
CPCH01L21/02381H01L21/0243H01L21/02656H01L29/0603H01L29/0657H01L29/0665H01L29/0692
Inventor 潘泰松李宇王海钱颜卓程姚光高敏林媛
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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