Method for producing semiconductor element substrate
A technology for component substrates and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem that it is difficult to cut a thin single crystal element supporting substrate from an ingot, the cutting amount becomes larger, and the single crystal is difficult to cut. SiC is prone to cracks and other problems
Pending Publication Date: 2020-01-07
X VI INC
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Problems solved by technology
However, there is a problem that it is difficult to handle thinner wafers
[0009] In addition, conventionally, it has been difficult to cut out a thin single crystal element supporting substrate from an ingot.
Method used
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Embodiment Construction
[0068] refer to Figure 16 ~ Figure 20 A basic manufacturing method of the semiconductor element substrate of this embodiment will be described. A basic manufacturing method of a semiconductor element substrate includes a thin film formation process, a substrate formation process, an element formation process, and a temporary substrate removal process.
[0069]In the thin film forming step, the separation thin film layer 45 made of the fourth semiconductor material is formed on the first temporary substrate 42 .
[0070] In the substrate forming step, a support layer 61(6) of a predetermined thickness made of a single crystal or polycrystal of the second semiconductor material is formed on the thin film layer 45 for separation, and a support layer 61(6) composed of a second semiconductor material is formed on the support layer 61(6). 3. A second thin film layer 80 made of a single crystal of a semiconductor material.
[0071] In the element forming step, the semiconductor el...
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Abstract
The method for producing a semiconductor element substrate comprises: a thin film formation step wherein a thin film layer (45) for separation is formed on a first temporary substrate (42); a substrate formation step wherein a support layer (61, 6), which has a predetermined thickness and is formed of a single crystal or polycrystal of a second semiconductor material, is formed on the thin film layer for separation and a second thin film layer (80), which is formed of a single crystal of a third semiconductor material, is formed on the support layer; an element formation step wherein a semiconductor element (9) is formed on the second thin film layer; and a temporary substrate removal step wherein the first temporary substrate is removed using the thin film layer for separation as the boundary, thereby obtaining a semiconductor element substrate (10) which is provided with the second thin film layer on the support layer, the second thin film layer being provided with the semiconductorelement.
Description
technical field [0001] The invention relates to a manufacturing method of a semiconductor element substrate. Specifically, it relates to a method of manufacturing a semiconductor element substrate in which a semiconductor element is formed on a wide bandgap compound semiconductor layer and a supporting layer of the compound semiconductor layer has an optimum thickness. Background technique [0002] A silicon carbide (SiC) semiconductor substrate having a large band gap has attracted attention as a substrate of a semiconductor element for high-voltage applications. Figure 21 A cross-sectional structure of a MOSFET (100) with a general vertical structure made of SiC is shown. A single crystal layer 120 for an element is formed by epitaxial growth on the supporting substrate 110 for an element, and a source 101 , a drain 102 , and a gate 103 are formed in a region of the single crystal layer 120 for an element. The on and off of the current between the source 101 and the drai...
Claims
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IPC IPC(8): H01L21/02H01L21/20H01L21/265H01L21/336H01L27/12H01L29/12H01L29/78
CPCH01L27/12H01L29/12H01L29/78H01L21/02H01L21/20H01L21/265
Inventor 加藤光治
Owner X VI INC