Heat dissipation intelligent power semiconductor module based on micro-level SSOP packaging and preparation method and application thereof
An intelligent power and semiconductor technology, applied in the application of semiconductor devices, thermometers, semiconductor/solid-state device components, etc., can solve problems such as the inability to meet the performance requirements of semiconductor packaging modules, and achieve high heat dissipation effect and good heat radiation effect.
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Embodiment 1
[0048] See attached Figure 1-3 ; A heat dissipation intelligent power semiconductor module based on a micro-level SSOP package, which consists of the following:
[0049] Lead frame 1, control element 2, drive element, power switch element, temperature detection element 3, plastic package 4, external lead wire 5, control element, drive element, power switch element, temperature detection element are all glued on the lead frame; drive The components include 3 integrated high and low voltage drive components 6; the power switch components are 3 high-voltage side power switch components 7 and 3 low-voltage side power switch components 8; the plastic package is a fully enclosed plastic package; the heat dissipation surface of the lead frame is located in the plastic package At the inner upper end, the length of the plastic package is not greater than 22 mm, the width is not greater than 11 mm, and the thickness is not greater than 2 mm (package size ≤ 22×11×2), lead frame, control...
Embodiment 2
[0051] See attached Figure 4-5 ; A heat dissipation intelligent power semiconductor module based on a micro-level SSOP package, which consists of the following:
[0052] Lead frame 1, control element 2, drive element, power switch element, temperature detection element 3, plastic package 4, external lead 5, the control element, drive element, power switch element, temperature detection element are all located on the lead frame; the drive element is 1 integrated low-voltage drive element 9, 1 integrated high-voltage drive element 10; power switch elements are 3 high-voltage side power switch elements 7, 3 low-voltage side power switch elements 8, high-voltage side power switch elements, low-voltage side power switch elements respectively Located on both sides of the lead frame, the temperature detection element is located on the side of the power switch element on the high-voltage side, and in the middle; the plastic package is a fully enclosed plastic package, and the package...
Embodiment 3
[0054] See attached Figure 6 ; A heat dissipation intelligent power semiconductor module based on a micro-level SSOP package, which consists of the following:
[0055]Lead frame 1, control element, drive element, power switch element, temperature detection element, plastic package 4, external leads, control element, drive element, power switch element, temperature detection element are all located on the lead frame, bonded to the convex structure The upper surface of the opening; the layout is the same as that of Embodiment 1; the driving element includes 3 integrated high and low voltage driving elements; the power switching element includes 3 high voltage side power switching elements and 3 low voltage side power switching elements; using 3 integrated high and low voltage When driving components (2 in 1), the high-voltage side and low-voltage side power components are arranged alternately, and the temperature detection component is located in the middle of the lead frame, c...
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