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Solution for removing residues after etching capable of removing titanium nitride

A technology of oxides and oxidants, applied in chemical instruments and methods, organic non-surface-active cleaning compositions, detergent compounding agents, etc., can solve problems such as damage to low-k dielectric materials

Pending Publication Date: 2020-01-21
BASF AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the fluid composition contains at least one source of fluoride, which will damage the low-k dielectric material

Method used

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  • Solution for removing residues after etching capable of removing titanium nitride
  • Solution for removing residues after etching capable of removing titanium nitride
  • Solution for removing residues after etching capable of removing titanium nitride

Examples

Experimental program
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example

[0093] The following examples are given to allow a better understanding of the present disclosure. These examples should not be construed as narrowing the scope of the present disclosure in any way.

[0094] All percentage data in this specification are percentages by weight based on the total weight of the composition, except that the oxidizing agent is added in a volume ratio of the composition comprising components a) to g) to the oxidizing agent. It goes without saying that the amounts of components a) to g) added to the composition add up to 100%.

[0095] Various examples were carried out following the steps described above as outlined below to illustrate the present disclosure and a comparison between the prior art and the present disclosure.

[0096] Instances 1 to 6

[0097] The role of organic amines

[0098] In examples 1 to 6, tetraammonium edetate was used as activator, BDG was used as glycol ether, DMSO was used as aprotic solvent, and BTA was used as inhibito...

example 7-17

[0103] The role of activators

[0104] In example 7-17, 4-methylmorpholine 4-oxide is used as organic amine, BDG is used as glycol ether, DMSO is used as aprotic solvent, and BTA is used as inhibitor, and in example 7-9, In 10-11, 12-13, 14-15 and 16-17, tetraammonium ethylenediamine tetraacetate, trans-1,2-cyclohexylidene dinitrotetraammonium tetraacetate and triammonium citrate were used respectively , ammonium acetate or diammonium hydrogen phosphate as an activator. The rest is water.

[0105] Table 2

[0106]

[0107]

[0108] The results in Table 2 show that the TiN E / R is very low when no activator is used (Example 7), and the TiN E / R increases significantly with increasing activator amount.

example 18-24

[0110] The role of inhibitors

[0111] In Examples 18-24, 4-methylmorpholine 4-oxide was used as the organic amine, trans-1,2-cyclohexylidenedinitrotetraammonium tetraacetate was used as the activator, and BDG was used as the Alcohol ethers, using DMSO as an aprotic solvent, while BTA, N,N-bis(2-ethylhexyl)-4-methyl-1H-benzotriazole-1-methylamine, N,N-bis( 2-Ethylhexyl)-5-methyl-1H-benzotriazole-1-methanamine, 2,2'-[[(5-methyl-1H-benzotriazol-1-yl)methyl One or more of ]imino]bisethanol and 6-methyl-benzotriazole are used as inhibitors, respectively. The rest is water.

[0112] table 3

[0113]

[0114]

[0115] The results in Table 3 show that Cu / Co E / R is significantly reduced with different inhibitor combinations while maintaining similar TiN E / R. Ru E / R was not detected. That is, the protection of Cu / Co / Ru can be achieved without compromising the TiN E / R if an appropriate combination of inhibitors is used.

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Abstract

The present invention relates to a composition capable of removing the organic polymers and residues during high TiN etching without compromising Cu, Co and / or Ru, or without the risk of damaging other materials (e.g., low-k materials) present in the structure, the composition comprising: a) an organic amine, b) one or more inhibitors, c) one or more buffers, d) an activator, e) one or more glycolethers, f) optionally an aprotic solvent, and g) water. The invention relates to kits comprising said composition in combination with an oxidizing agent, and to the use thereof.

Description

technical field [0001] The present invention relates to compositions for post-implantation, etch / post-etch and post-ash related treatments in the field of semiconductor / IC production. More specifically, the present invention relates to a composition having good cleaning performance on fluorocarbon (CFx) polymers and organic residues, capable of completely removing or shrinking metal hard masks such as titanium nitride (TiN) ), while protecting Cu, Co, and Ru as interconnect liners, caps, or barriers. Background technique [0002] An integrated circuit (IC) consists of millions of active devices formed in or on a silicon substrate. Active devices that were originally isolated from each other are combined to form functional circuits and components. These devices are interconnected using well-known multilayer interconnects. Interconnect structures typically have a first metallization level, an interconnect level, a second metallization level, and more recently third and subs...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D7/26C11D7/32C11D7/34C11D7/18C11D7/60
CPCC11D7/3245C11D7/263C11D7/34C11D7/3281C11D3/3942
Inventor 杰瑞·志正·柯王哲伟乔恩尼司·席尔多瑞丝·维李恩提纳斯·胡格布曼安卓亚斯·克里普
Owner BASF AG