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Intermittent magnetron sputtering method for enhancing disorder in amorphous materials

A magnetron sputtering and amorphous material technology, applied in the field of magnetron sputtering, can solve the problems of easily changing the characteristics of the material itself, fast heating of DC magnetron sputtering, and increasing the preparation cost, and achieves the advantages of amorphous performance, The effect of maintaining the disorder of the film and improving the disorder

Active Publication Date: 2021-04-06
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] For amorphous materials, the disorder of the material plays a significant role in improving the performance of the film. The traditional method of improving the disorder of the material by doping is not only complicated in the process, but also easy to change the characteristics of the material itself, and Easy to increase preparation cost
[0004] Chinese patent CN107043914A discloses a method for preparing an amorphous cobalt-based magnetic film by intermittent DC magnetron sputtering, but its purpose is to prepare an amorphous cobalt-based magnetic film, and it mainly adopts a gradient heating method. It solves the problem of rapid temperature rise in DC magnetron sputtering at low temperatures

Method used

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  • Intermittent magnetron sputtering method for enhancing disorder in amorphous materials
  • Intermittent magnetron sputtering method for enhancing disorder in amorphous materials
  • Intermittent magnetron sputtering method for enhancing disorder in amorphous materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] S1: After cleaning the substrate to be sputtered, place it on the tray of the sputtering chamber;

[0042] S2: After grinding and cleaning the sputtering target, place it on the DC sputtering target position of the sputtering chamber;

[0043]S3: Turn on the power and evacuate the sputtering chamber to a vacuum of 1×10 -4 Pa;

[0044] S4: Set the condition parameters in the sputtering process, where the base distance of the target is 60mm, and the sputtering power of the target is 20W; fill the sputtering chamber with an inert gas N 2 ;

[0045] S5: Perform intermittent magnetron sputtering on the target to be sputtered in the sputtering chamber, keep the substrate temperature below 80°C during the sputtering process, and keep the sputtering environment unchanged for the first time during the sputtering process In this case, stop sputtering for the first time, then sputter for the first time, stop sputtering for the second time, then stop sputtering for the first tim...

Embodiment 2

[0047] S1: After cleaning the substrate to be sputtered, place it on the tray of the sputtering chamber;

[0048] S2: After grinding and cleaning the sputtering target, place it on the DC sputtering target position of the sputtering chamber;

[0049] S3: Turn on the power and evacuate the sputtering chamber to a vacuum degree of 2×10 -4 Pa;

[0050] S4: Set the condition parameters in the sputtering process, where the base distance of the target is 80mm, and the sputtering power of the target is 40W; fill the sputtering chamber with an inert gas N 2 ;

[0051] S5: Perform intermittent magnetron sputtering on the target to be sputtered in the sputtering chamber, keep the substrate temperature below 80°C during the sputtering process, and keep the sputtering environment unchanged for the first time during the sputtering process In this case, stop sputtering for the first time, then sputter for the first time, stop sputtering for the second time, then stop sputtering for the f...

Embodiment 3

[0053] S1: After cleaning the substrate to be sputtered, place it on the tray of the sputtering chamber;

[0054] S2: After grinding and cleaning the sputtering target, place it on the DC sputtering target position of the sputtering chamber;

[0055] S3: Turn on the power and evacuate the sputtering chamber to a vacuum of 3×10 -4 Pa;

[0056] S4: Set the condition parameters in the sputtering process, wherein the base distance of the target is 100mm, and the sputtering power of the target is 60W; the sputtering chamber is filled with inert gas Ar;

[0057] S5: Perform intermittent magnetron sputtering on the target to be sputtered in the sputtering chamber, keep the substrate temperature below 80°C during the sputtering process, and keep the sputtering environment unchanged for the first time during the sputtering process In this case, stop sputtering for the first time, then sputter for the first time, stop sputtering for the second time, then stop sputtering for the first ...

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Abstract

The invention discloses an intermittent magnetron sputtering method for improving the disorder of an amorphous material, which comprises the following steps: after cleaning a substrate to be sputtered, placing it on a pallet of a sputtering cavity; After the target is polished and cleaned, it is placed on the DC sputtering target position of the sputtering chamber; the sputtering chamber is evacuated to a set vacuum degree; the condition parameters during the sputtering process are set; The sputtering target is subjected to intermittent magnetron sputtering. During the sputtering process, the first time is sputtered. When the sputtering environment is kept constant, the sputtering is stopped for the first time, and then the sputtering is performed for the first time. Stop sputtering for the second time, then sputter for the first time, stop sputtering for the third time, and perform sputtering in sequence, and the time of each pause is extended in turn until the required film thickness is sputtered. The intermittent magnetron sputtering method of the present invention is more conducive to the formation of the amorphous properties of the film while maintaining the improvement of the disorder degree of the film.

Description

technical field [0001] The invention belongs to the technical field of magnetron sputtering, and more specifically relates to an intermittent magnetron sputtering method for improving the disorder of amorphous materials. Background technique [0002] Compared with crystalline materials, amorphous materials have a unique atomic arrangement, which has the characteristics of short-range order and long-term disorder. Thus, amorphous materials exhibit different and unique chemical and structural properties from crystalline materials, such as isotropy, high concentration of unsaturated coordination active sites, and widely adjustable composition. Due to their unique chemical and structural characteristics, amorphous materials have shown far superior catalytic properties to corresponding crystalline materials in the fields of chemical production, energy conversion, and environmental remediation, and thus have attracted widespread attention. [0003] For amorphous materials, the di...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/54
CPCC23C14/35C23C14/54
Inventor 缪向水何超童浩
Owner HUAZHONG UNIV OF SCI & TECH