Cleaning process of germanium single crystal single-sided polished wafer

A single-sided polishing and single-crystal germanium technology, which is applied in the manufacture of electrical components, semiconductor/solid-state devices, circuits, etc., can solve problems such as low battery conversion efficiency and surface fog spots, and achieve increased production capacity, no polishing liquid, and reduced production cost effect

Inactive Publication Date: 2020-01-31
CHINA ELECTRONICS TECH GRP NO 46 RES INST
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In the current processing of germanium single crystal single-sided polished wafers, UV film is used for rough polishing and fine polishing. Surface contamination and particles, germanium single-crystal polishe

Method used

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Examples

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Embodiment 1

[0014] Example 1: Germanium single crystal: P-type , resistivity: ≤0.1Ω·㎝, diameter: 100mm, thickness: 175±15μm, single-sided polishing, using UV film on the back of germanium single crystal for rough polishing .

[0015] The cleaning steps are as follows:

[0016] (1) Put the germanium sheets after rough polishing into 25 pieces of PFA flower baskets to rinse with pure water, and then irradiate with UV lamps after drying to reduce the viscosity of the UV film, and then remove the UV film;

[0017] (2) Configure concentrated sulfuric acid at 68°C and concentrated sulfuric acid at 21°C;

[0018] (iii) Soak the PFA flower basket with 25 pieces of germanium in concentrated sulfuric acid at 68°C for 35s, then soak in concentrated sulfuric acid at 21°C for 35s, and then rinse with pure water;

[0019] (iv) Finely polish the germanium sheet, and then rinse it with pure water;

[0020] (5) Clamp the germanium sheet with a single clip, soak it in 0.5% potassium hydroxide solution f...

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PUM

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Abstract

The invention provides a cleaning process of a germanium single crystal single-sided polished wafer. The cleaning process is characterized in that germanium single-crystal single-sided polished waferis roughly polished by pasting a UV film on the back surface, the UV film on the back surface of the wafer is removed, the wafer is subjected to soaking in concentrated sulfuric acid twice to remove residual glue contamination on the edge of the germanium single-crystal single-sided polished wafer, fine polishing is performed, cleaning is performed with potassium hydroxide solution after fine polishing, and lastly, an SC-1 liquid cleaning mode is adopted, so surface contamination of the germanium single-crystal single-side polished wafer is effectively removed, the surface requirement of cleaning-free box opening for use is met, the surface quality of the germanium single-side polished wafer is greatly improved, and a good foundation is laid for subsequent improvement of the quality of anepitaxial layer of the germanium single-side polished wafer. The cleaning process is advantaged in that the cleaning process is simple to operate and easy to implement, cleaning difficulty of the germanium single-crystal single-sided polished wafer is reduced, and batch production is easy to realize.

Description

technical field [0001] The invention relates to semiconductor material processing technology, in particular to a cleaning process for germanium single-crystal single-sided polished wafers. Background technique [0002] Germanium single crystal single-sided polished sheet has good mechanical properties and thermal conductivity, and is mainly used in high-efficiency batteries. High temperature, high temperature resistance, radiation resistance, strong reliability and other advantages, the compound battery needs to grow multi-layer crystal materials in the MOCVD process, and it is a heterojunction growth, which is prone to lattice distortion. Therefore, the compound battery puts forward relatively strict requirements on the surface quality of germanium single crystal single-sided polished wafers. [0003] In the current processing of germanium single crystal single-sided polished wafers, UV film is used for rough polishing and fine polishing. Surface contamination and particl...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/304
CPCH01L21/02057H01L21/304
Inventor 冯奎王云彪武永超张贺强陈亚楠龚一夫吕菲
Owner CHINA ELECTRONICS TECH GRP NO 46 RES INST
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