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Preparation method of high-thermal-conductivity ceramic material for LEDs

A technology of high thermal conductivity ceramics and preparation steps, which is applied in metal material coating technology, semiconductor devices, liquid chemical plating, etc., can solve the problem of low heat dissipation efficiency of LED ceramic substrates, achieve safe and reliable anti-electromagnetic shielding performance, and improve heat dissipation The effect of high stability and lattice oscillation harmony

Inactive Publication Date: 2020-02-07
吴俊楠
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention: Aiming at the problem of low heat dissipation efficiency of the existing LED ceramic substrate, a preparation method of a high thermal conductivity ceramic material for LED is provided

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0036] In parts by weight, weigh 20 parts of aluminum nitrate, 2 parts of calcium nitrate, 2 parts of yttrium nitrate, 10 parts of glucose, and 100 parts of deionized water, add aluminum nitrate, calcium nitrate, yttrium nitrate, and glucose into the deionized water, Stir at 200r / min at room temperature for 20min to obtain a mixed solution, heat the mixed solution in an oven at 120°C for 1h to obtain a foamy powder, place the foamy powder in a muffle furnace, and heat the mixed solution at 20°C / The temperature was raised to 1000 °C at a rate of 1 min, and the heat preservation and calcination was carried out for 40 min to obtain a mixed powder precursor. The mixed powder precursor was placed in a vacuum carbon tube sintering furnace, and nitrogen was introduced at a rate of 100 mL / min. Raise the temperature to 1300°C, hold for 2 hours for nitriding, then cool down to 600°C, hold for 30 minutes to remove carbon, and cool to room temperature with the furnace to obtain aluminum n...

example 2

[0040] In parts by weight, weigh 25 parts of aluminum nitrate, 2.5 parts of calcium nitrate, 2.5 parts of yttrium nitrate, 12.5 parts of glucose, and 125 parts of deionized water, add aluminum nitrate, calcium nitrate, yttrium nitrate, and glucose into deionized water, Stir at 250r / min at room temperature for 25min to obtain a mixed solution, heat the mixed solution in an oven at 130°C for 1.5h to obtain a foamy powder, place the foamy powder in a muffle furnace, Raise the temperature to 1100°C at a rate of 110mL / min, heat-preserve and calcine for 50min to obtain a mixed powder precursor, place the mixed powder precursor in a vacuum carbon tube sintering furnace, feed nitrogen gas at a rate of 110mL / min, and heat at room temperature at 50°C / min The temperature was raised to 1450°C at a certain rate, held for 3 hours for nitriding, then cooled to 700°C, held for 35 minutes to remove carbon, and cooled to room temperature with the furnace to obtain aluminum nitride powder with an...

example 3

[0044] In parts by weight, weigh 30 parts of aluminum nitrate, 3 parts of calcium nitrate, 3 parts of yttrium nitrate, 15 parts of glucose, and 150 parts of deionized water, add aluminum nitrate, calcium nitrate, yttrium nitrate, and glucose into deionized water, Stir at 300r / min at room temperature for 30min to obtain a mixed solution, heat the mixed solution in an oven at 140°C for 2h to obtain a foamy powder, place the foamy powder in a muffle furnace, and heat the mixed solution at 20°C / The temperature was raised to 1200°C at a rate of 1 min, and the heat preservation and calcination was carried out for 60 min to obtain a mixed powder precursor. The mixed powder precursor was placed in a vacuum carbon tube sintering furnace, and nitrogen gas was introduced at a rate of 120 mL / min. Raise the temperature to 1600°C, hold for 4 hours for nitriding, then cool down to 800°C, hold for 40 minutes to remove carbon, and cool to room temperature with the furnace to obtain aluminum ni...

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Abstract

The invention relates to a preparation method of a high-thermal-conductivity ceramic material for LEDs, and belongs to the technical field of LEDs. According to the method, an aluminum nitride ceramicis used as a substrate to prepare the high-thermal-conductivity ceramic material for LEDs through an electroless silver plating process. The aluminum nitride ceramic are a ceramic material with excellent comprehensive properties, aluminum nitride has the characteristics of low atomic weight, strong bonding between atoms, simple crystal structure, high crystal lattice oscillation harmonicity, andthe like, and thereby has extremely high thermal conductivity. Electroless silver plating on the surface of the aluminum nitride ceramic substrate is performed, ammonia water and silver ions are usedto form a silver ammonia complex ion solution, potassium hydroxide is used as a speed regulator and a pH regulator, a deposition rate can be increased, a silver plating rate can be effectively improved, and thereby the heat dissipation performance of the material is improved.

Description

technical field [0001] The invention relates to a preparation method of a high thermal conductivity ceramic material for LEDs, belonging to the technical field of LEDs. Background technique [0002] The structural composition of LED can be simply summarized into three main parts, namely heat dissipation substrate, chip and phosphor. Among them, the heat dissipation substrate has two main functions: one is to act as a support for the support; the other is to conduct and dissipate heat during the LED working process. [0003] Alumina ceramics is the most common ceramic substrate material. Due to its low price, good stability, good insulation and mechanical properties, and sophisticated technology, it is currently the most widely used ceramic substrate material. However, the thermal conductivity of alumina ceramics is low (20W / m K), and the thermal expansion coefficient does not match Si, which limits its application in high-power electronic products to a certain extent, and i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/88C04B35/582C04B35/626C04B35/622C23C18/44H01L33/48H01L33/64
CPCC04B35/581C04B35/622C04B35/626C04B41/5116C04B41/88C04B2235/3206C04B2235/3208C04B2235/3409C04B2235/3418C04B2235/5427C04B2235/5436C04B2235/6562C04B2235/6567C04B2235/658C23C18/1662C23C18/44H01L33/48H01L33/641C04B41/455C04B41/4535
Inventor 吴俊楠洪明祈
Owner 吴俊楠