Integrated preparation device of high-flux magnetron sputtering nano film device

A nano-film and preparation device technology, which is applied in the field of integrated preparation devices for high-throughput magnetron sputtering nano-film devices, can solve the problem that the amount of samples processed at one time needs to be increased, and achieve full use of space, uniform coating, and easy The effect of control

Active Publication Date: 2020-02-11
纳能镀膜丹阳有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the current research on high-throughput magnetron sputtering plating equipment is less, the amount of samples processed at one time needs to be increased, and how to achieve high consistency of samples processed at one time has always been a problem faced by those skilled in the art. The field of research on magnetron sputtering coating devices for multilayer film devices is still blank

Method used

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  • Integrated preparation device of high-flux magnetron sputtering nano film device
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  • Integrated preparation device of high-flux magnetron sputtering nano film device

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Effect test

Embodiment 1

[0068] The structure of the host 1 of the high-throughput magnetron sputtering nanometer thin film device integrated preparation device in this embodiment is as follows figure 1 As shown, the host 1 includes a working chamber 2, a sample holder 3, a magnetron target 4, a target baffle 5 and a sample baffle 6, the host 1 is the core working part of the preparation device, and the magnetron sputtering coating operation is performed in the working chamber 2 internally. The upper part of the working chamber 2 is in the shape of a circular truncated table, the side of the circular table is an inclined wall surface, and the inclination angle between the inclined wall surface and the horizontal plane is 45 degrees. The middle and lower parts of the working chamber 2 are in the shape of a cylinder. One side of the working chamber 2 is provided with a sample door 201 for the entry and exit of samples, and a magnetic plate 202 is provided between the sample door 201 and the door frame ...

Embodiment 2

[0099] This embodiment uses the high-throughput magnetron sputtering nanometer thin-film device integrated preparation device of Embodiment 1. In this embodiment, 100 inorganic all-solid-state electrochromic thin-film devices are prepared. The specific method is as follows:

[0100] (1) Turn on the power supply, according to the requirements of sputtering coating, the coating time of five magnetron targets 4 is set to be 5 seconds, and five magnetron targets 4 start coating successively in clockwise order, and DC power supply, radio frequency power supply, bias The current and voltage of the piezoelectric power supply and the heating power supply, the temperature of the sample stage 301 set on the temperature controller;

[0101] (2) plastic substrate is placed on sample stage 301 by sample door 201, adjust sample stage 301 height, make whole sample stage 301 enter the coating range of magnetron target 4, close sample door 201, start vacuum pump 8 and molecular pump 7, Monitor...

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Abstract

The invention relates to an integrated preparation device of a high-flux magnetron sputtering nano film device. The integrated preparation device of the high-flux magnetron sputtering nano film devicecomprises a main machine, a vacuum air extractor, a power supply and control system and a machine cabinet; the main machine comprises a working chamber, a sample rack, five magnetic control targets and a sample baffle plate; the five magnetic control targets obliquely surround the top of the working chamber to realize co-sputtering or sequential sputtering; each magnetic control target is provided with a target baffle; the target baffle temporarily shields the corresponding magnetic control target through contraction opening and closing; the sample rack is arranged below the magnetic controltargets; the top of the sample rack is provided with a sample cover; the sample cover is provided with a plurality of sample through holes and is used for high-flux preparation of multi-component mixed nano films and nano multilayer functional film devices; and the sample baffle is arranged above the sample cover. According to the design of the magnetic control targets of a coating preparation device, the space inside the working chamber is fully utilized, and the co-sputtering or the sequential sputtering coating can be realized. The sample cover is provided with not less than 100 sample through holes, hundreds of identical samples can be prepared simultaneously in a single time, and the possibility is provided for high-flux coating of a material genome.

Description

technical field [0001] The invention belongs to the technical field of magnetron sputtering coating, and in particular relates to an integrated preparation device for high-throughput magnetron sputtering nanometer thin film devices. Background technique [0002] Magnetron sputtering is a kind of physical vapor deposition (Physical Vapor Deposition, PVD). Magnetron sputtering coating technology is an important film preparation method, which can prepare metal, semiconductor, insulator and other multi-material films on the carrier. , has the advantages of simple equipment, easy control, large coating area and strong adhesion. Magnetron sputtering introduces a magnetic field on the surface of the target cathode, and uses the magnetic field to confine charged particles to increase the plasma density to increase the sputtering rate. [0003] Patent CN201110358232.0 provides a magnetron sputtering system, including magnetron chamber, substrate turntable, substrate turntable drive ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/50C23C14/54B82Y40/00
CPCB82Y40/00C23C14/352C23C14/505C23C14/54
Inventor 刁训刚秦建平刁诗如
Owner 纳能镀膜丹阳有限公司
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