A kind of sic MOSFET surge performance test method

Abstract

The invention discloses a method for testing the surge performance of a SiC MOSFET. A field effect transistor device is placed on a test probe station, a surge current generating circuit is connectedwith a driving circuit, the amplitude and the period of an output current are set, the output current is applied to the field effect transistor device for surge test to measure and obtain source-drainvoltages under the surge currents of different amplitudes, gate-source resistance of the device after surge test and transfer characteristic curves before surge test and after surge test, wherein horizontal and vertical coordinates of the transfer characteristic curves are the source-drain voltage and the drain current respectively; the surge current generating circuit is used for generating a surge current, after the surge current passes through the device, the electrical characteristics of the device can be changed, and it is determined whether the device fails or not according to the change of the electrical characteristics. The invention provides a simple and reliable method for testing the surge reliability of the SiC MOSFET, and the surge performance and data of the SiC MOSFET fieldeffect transistor device can be effectively obtained.

Description

technical field [0001] The invention belongs to the field of testing semiconductor devices, especially the field of testing SiC semiconductor devices. The invention can effectively test and obtain the surge performance of SiC MOSFETs. Background technique [0002] With the advancement of semiconductor materials and device technology, the manufacturing process and device structure design of silicon (Si)-based power electronic devices have become increasingly mature and are gradually approaching the theoretical limit determined by material properties. Silicon carbide (SiC) and The third-generation semiconductor material represented by gallium nitride (GaN) is a semiconductor material that has developed rapidly after the first-generation and second-generation semiconductor materials. In particular, SiC semiconductor materials have the advantages of large band gap, high breakdown electric field, high thermal conductivity, and high electron saturation velocity, which are very sui...

AI Technical Summary

Problems solved by technology

At present, in the switching circuit, the surge current is very common and often causes impact on the device. However, there is currently no standardized method to measure the surge performance of the device.

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