A Antimonide Superlattice VLWIR Detector with Dark Current Suppression Structure

Abstract

A antimonide superlattice VLWIR detector with a dark current suppression structure to suppress device dark current and improve photogenerated carrier transport. Including the following structure: substrate; buffer layer, epitaxial on the substrate; middle and long wave band contact layer, called P region, epitaxial on the buffer layer; very long wave band absorbing layer, called π region, The epitaxial is above the P region of the medium and long wave band contact layer; the medium and long wave band barrier layer is called the M region, and is epitaxially above the π region of the very long wave band absorbing layer; the medium and long wave band contact layer is called the N region , epitaxial on the M region of the medium and long wave band barrier layer; the capping layer is epitaxial on the N region of the medium and long wave band contact layer; adjusting and controlling the superlattice structure of each region, the doping of the absorbing layer and the barrier layer The complex mode and thickness are used to design the energy band structure of the infrared detector device. The structure is based on the PπMN structure, and a new barrier structure design is proposed involving superlattice, thickness and doping.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a structure of a superlattice very long-wave infrared detector to suppress device dark current and improve photogenerated carrier transport. Especially the energy band structure of a VLWIR detector based on antimonide superlattice. Based on the PπMN structure, the structure proposes a new barrier structure design involving superlattice structure, thickness and doping, etc. Background technique [0002] Objects above absolute zero are always radiating electromagnetic waves to the outside world, and those with wavelengths in the range of 0.76-1000 μm are called infrared radiation. Objects exhibit different infrared characteristics due to their different temperatures, so infrared detection technology has extensive and important applications in military, civilian, astronomical and other fields. Among them, the very long wave infrared detection technology (...

AI Technical Summary

Problems solved by technology

The problem with existing VLWIR detectors is that the dynamic impedance R 0 A is low and decreases rapidly with increasing reverse bias voltage

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