Integrated lithography method and lithography system for full field of view and low aberration sensitivity
A full-field-of-view, high-sensitivity technology, applied in the system field, can solve problems such as insufficient compensation capability and non-negligible polarization effects of three-dimensional masks, to improve stability, improve fidelity and resolution, and reduce the cost of lithographic imaging. effect of influence
Active Publication Date: 2020-08-28
BEIJING INSTITUTE OF TECHNOLOGYGY
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Problems solved by technology
In addition, since the technology node of the integrated circuit has reached 14 to 7 nanometers, which is much smaller than the light source wavelength of 193 nanometers, the polarization effect of the complex diffraction of the three-dimensional mask cannot be ignored
However, the existing technology (AppliedOptics, 2014, 53:6861-6871) can only compensate the wavefront phase distortion caused by the thick mask effect by adjusting the pupil phase of the lithography system, and the compensation ability is insufficient.
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[0083] In this embodiment, the fidelity of lithography imaging is evaluated by pattern error, the smaller the pattern error is, the greater the fidelity of lithography imaging is, and vice versa. Pattern Error (PAE) is defined as:
[0084]
[0085] Among them, Z(x, y) is the value of the target pattern Z at the coordinates (x, y), and Z(x, y) is the value of the actual photoresist imaging Z at the coordinates (x, y).
[0086] Such as image 3 Shown is a schematic diagram of an initial light source pattern, an initial mask pattern and its corresponding imaging in the photoresist. exist image 3 Among them, 301 is the initial light source pattern, white represents the light-emitting part, and black represents the non-light-emitting part. 302 is the initial mask pattern, which is also the target pattern, white represents the light-transmitting area, black represents the light-blocking area, and its characteristic size is 22nm. 303 is the initial pupil distribution function...
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The invention provides an integrated photolithography method. The polarization characteristics of light are considered in the process of implementing resolution enhancement, the propagation, focusingand imaging processes of light under the condition of super-large NA can be accurately described, the influence of random aberration on photolithography imaging can be effectively reduced and the stability of the photolithography process can be improved. The photolithography imaging pattern error corresponding to each field of view point in the current state is calculated. The weight of each fieldof view point in the next iteration is adaptively determined according to the current photolithography imaging pattern error and a full field of view objective function is constructed. The method canfully balance the imaging quality of full field of view photolithography and improve the stability of photolithography process. The analytical relationship between photolithography imaging and vectorpupil is constructed. The conjugate gradient method is utilized to effectively solve the optimal vector pupil distribution so as to minimize the error of photolithography imaging pattern. The methodgreatly improves the degree of freedom of pupil optimization and can effectively compensate the polarization effect caused by complex diffraction of thick mask and the polarization aberration of the photolithography system.
Description
technical field [0001] The invention belongs to the field of resolution enhancement technologies such as integrated circuit design, manufacturing equipment, technology, microscopic imaging, and telephoto imaging, and specifically relates to a full-field low-aberration-sensitivity integrated photolithography method and a photolithography system, and more Specifically, it relates to a light source optimization method and a mask optimization method that effectively reduce the sensitivity of lithography imaging to random aberrations, and a vector pupil optimization method that effectively balances the quality of full-field lithography imaging. Background technique [0002] Optical lithography is a key technology in the field of VLSI fabrication. At present, the working wavelength of the mainstream lithography system in the industry is 193 nanometers. As the lithography process enters the technology node of 7 nanometers and below, the minimum line width on the integrated circuit ...
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IPC IPC(8): G03F7/20
CPCG03F7/70425G03F7/70433G03F7/70483
Inventor 李艳秋李铁刘阳孙义钰
Owner BEIJING INSTITUTE OF TECHNOLOGYGY