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Piezoelectric thin film element

A piezoelectric film and component technology, applied in electrical components, piezoelectric devices/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, etc. The effect of grid mismatch reduction

Active Publication Date: 2020-02-21
TDK CORPARATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with PZT with a perovskite structure, piezoelectric films with a wurtzite structure such as AlN, ZnO, and CdS have a smaller positive piezoelectric constant (d constant), but a relative permittivity (ε r ) is smaller

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0125] An adhesive layer made of titanium oxide is directly formed on the entire (100) surface of the silicon single crystal substrate through DC (Direct Current) magnetron sputtering in a vacuum chamber. The thickness of the single crystal substrate was 625 μm. The thickness of the bonding layer is 5×10 -3 μm.

[0126] The first electrode layer is directly formed on the entire surface of the adhesion layer by DC magnetron sputtering in a vacuum chamber. In DC magnetron sputtering, the sputtering of the targets of multiple metal elements is carried out simultaneously. As a target, each simple substance of metal element EX and metal element EZ shown in Table 1 below was used. The metal element EX in the case of Example 1 is Pt. In the case of Example 1, the metal element EZ is Ni. In Example 1, the target of the metal element EY was not used. The first electrode layer of embodiment 1 comprises chemical formula Pt x Ni z The alloys shown have a face centered cubic (FCC) ...

Embodiment 2～9

[0164] In the preparation of each of the first electrode layers in Examples 2 to 9, as shown in Table 1 below, targets of at least two types of metal elements among the metal elements EX, EY, and EZ were used. The first electrode layer of each embodiment is by general chemical formula EX x EY y EZ z express. x is chemical formula EX x EY y EZ z The molar ratio of the metal elements in EX. y is chemical formula EX x EY y EZ z The molar ratio of metal elements in EY. z is the chemical formula EX x EY y EZ z The molar ratio of the metal elements in EZ. The compositions of the first electrode layers in Examples 2 to 9 are shown in Table 1 below. The first electrode layers of Examples 2 to 9 each include an alloy having a face-centered cubic lattice structure. In Examples 8 and 9, a target of zinc alone was sputtered in an oxidizing atmosphere to produce a piezoelectric thin film made of ZnO.

[0165] The piezoelectric thin film elements of Examples 2 to 9 were indi...

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Abstract

Provided is a piezoelectric thin film element in which lattice mismatch between a piezoelectric thin film and a lower electrode layer (a first electrode layer) is reduced. The piezoelectric thin filmelement 10 is provided with a first electrode layer 6a and a piezoelectric thin film 2 layered directly on the first electrode layer 6a. The first electrode layer 6a contains an alloy comprising two or more types of metal elements. The first electrode layer 6a has a face-centered cubic lattice structure. The piezoelectric thin film 2 has a wurtzite structure.

Description

technical field [0001] The invention relates to a piezoelectric film element. Background technique [0002] In recent years, MEMS (Micro Electro Mechanical Systems, Micro Electro Mechanical Systems) has attracted much attention. The so-called MEMS (Micro-Electro-Mechanical System) refers to a device in which mechanical components and electronic circuits are integrated on a single substrate using microfabrication technology. Piezoelectric films are utilized in MEMS that function as sensors, filters, harvesters, or actuators. In the manufacture of MEMS using a piezoelectric thin film, a lower electrode layer, a piezoelectric thin film, and an upper electrode layer are stacked on a substrate such as silicon or sapphire. After subsequent steps such as microfabrication, patterning, or etching, MEMS with arbitrary characteristics can be obtained. By selecting a piezoelectric thin film with excellent characteristics, it is possible to improve the characteristics and miniaturizat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/319B81B3/00C23C14/06H01L41/047H01L41/187
CPCB81B3/00C23C14/06H10N30/877H10N30/2042H10N30/853H10N30/878H10N30/50
Inventor 木村纯一
Owner TDK CORPARATION