Near-infrared fluorescent powder and luminescent device containing near-infrared fluorescent powder

A technology for light-emitting devices and phosphors, which can be applied to light-emitting materials, semiconductor devices, chemical instruments and methods, etc., can solve the problems of poor stability and low light-emitting efficiency, and achieve the effects of avoiding high cost, improving light-emitting intensity and expanding the scope of application.

Active Publication Date: 2020-03-03
GRIREM ADVANCED MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] The second technical problem to be solved by the present invention is to provide a light-emitting device that can realize high-efficiency near-infrared light emission under the exc

Method used

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  • Near-infrared fluorescent powder and luminescent device containing near-infrared fluorescent powder
  • Near-infrared fluorescent powder and luminescent device containing near-infrared fluorescent powder
  • Near-infrared fluorescent powder and luminescent device containing near-infrared fluorescent powder

Examples

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Effect test

Embodiment 1

[0036] The near-infrared fluorescent powder described in this embodiment, the compound composition formula that it comprises is Sc 0.98 GaO 3 :Cr 0.02 .

[0037] According to chemical formula Sc 0.98 GaO 3 :Cr 0.02 The stoichiometric ratio, accurately weighed Sc 2 o 3 , Ga 2 o 3 and Cr 2 o 3Mix evenly to obtain a mixture; calcinate the obtained mixture at 1400°C for 8 hours in a reducing atmosphere, and obtain a roasted product after cooling down; carry out post-treatments such as crushing, grinding, grading, and sieve washing on the obtained roasted product to obtain a near-infrared phosphor sample .

[0038] The resulting near-infrared luminescent material sample was subjected to an excitation test, and the excitation and emission spectra of the sample were obtained as shown in the attached figure 2 shown. It can be seen that the emission peak of the phosphor is located at 835nm, and the relative luminous intensity is 130.

Embodiment 2

[0040] The near-infrared fluorescent powder described in this embodiment, the compound composition formula that it comprises is Sc 0.98 Ga 0.3 B 0.7 o 3 :Cr 0.02 .

[0041] According to chemical formula Sc 0.98 Ga 0.3 B 0.7 o 3 :Cr 0.02 The stoichiometric ratio, accurately weighed Sc 2 o 3 , Ga 2 o 3 and Cr 2 o 3 Mix evenly; calcinate the obtained mixture at 1400°C for 8 hours in a reducing atmosphere, and obtain a roasted product after cooling down; carry out post-processing such as crushing, grinding, grading, and sieve washing on the obtained roasted product to obtain a near-infrared phosphor sample. It is determined that the emission peak of the phosphor is located at 826nm, and the relative luminous intensity is 150.

Embodiment 3-26

[0043] For the near-infrared phosphors described in Examples 3-26 and the light-emitting device containing the phosphors, their compound composition formulas are listed in Table 1 below, and the preparation method of the materials in each example is the same as that of Example 1. According to the chemical formula composition of the target compound in each embodiment, an appropriate amount of compound is selected for mixing, grinding, and roasting to obtain the desired near-infrared luminescent substance.

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Abstract

The invention belongs to the technical field of luminescent materials, particularly relates to near-infrared fluorescent powder, and further discloses a preparation method of the near-infrared fluorescent powder and a luminescent device containing the fluorescent powder, wherein the near-infrared fluorescent powder comprises an inorganic compound with a composition formula of AxRpOr, an AxRpOr structure is used as a matrix and is doped with specific rare earth ions or transition metal ions to form the compound, the excitation peak of the prepared fluorescent powder is located at 350-750 nm, broadband emission is shown under the excitation of ultraviolet light, blue light or red light, and the emission main peak is located at 700-1600 nm. According to the invention, the near-infrared fluorescent powder materials with different emission wavelengths can be prepared by constructing solid solutions through ion substitution and other methods due to the influence of crystal field splitting, so that the luminous intensity of the fluorescent powder is remarkably improved, the spectrum adjustability is realized, and the application range of the fluorescent powder material is further expanded.

Description

technical field [0001] The invention belongs to the technical field of light-emitting materials, and in particular relates to a near-infrared phosphor, and further discloses a preparation method thereof and a light-emitting device containing the phosphor. Background technique [0002] In recent years, with the rapid development of near-infrared spectroscopy technology in the fields of facial recognition, iris recognition, security monitoring, laser radar, health detection, 3D sensing and other fields, near-infrared LEDs are also due to their good directivity and low power consumption. And a series of advantages such as small size have become the focus of international research. [0003] At present, the main implementation method of near-infrared LED is the method of using near-infrared semiconductor chips. The core technology of near-infrared chip technology is monopolized by foreign countries, and has problems such as high cost and immature technology. Therefore, near-infr...

Claims

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Application Information

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IPC IPC(8): C09K11/78C09K11/80H01L33/50
CPCC09K11/7712C09K11/7706C09K11/778C09K11/7797H01L33/502H01L33/50C09K11/77C09K11/68C09K11/08
Inventor 刘荣辉刘元红陈晓霞马小乐高慰陈明月
Owner GRIREM ADVANCED MATERIALS CO LTD
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