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A hyperspectral image sensor monolithic integration method, sensor and imaging device

A technology of hyperspectral image and image sensor, which is applied in the field of sensor and imaging equipment, hyperspectral image sensor monolithic integration method, can solve problems such as device failure, poor height uniformity, and uneven size, so as to reduce etching error and improve performance, the effect of reducing deposition and etch times

Active Publication Date: 2021-11-05
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

For a transparent cavity layer composed of multiple step structures, a multi-step etching process is required. Due to the size inhomogeneity accumulated by gradual etching, the step structure on the transparent cavity layer finally formed by the etching process The height uniformity is poor, especially the difference in the final height of thin steps is greater, which may cause device failure

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  • A hyperspectral image sensor monolithic integration method, sensor and imaging device
  • A hyperspectral image sensor monolithic integration method, sensor and imaging device
  • A hyperspectral image sensor monolithic integration method, sensor and imaging device

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Embodiment Construction

[0027] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0028] In addition, for the convenience of description, spatial relationship terms such as "below", "beneath", "lower", "above", "upper" may be used herein to describe The relationship of one element or component to another element or component is shown. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly. Furthermore, the present ...

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Abstract

The invention provides a monolithic integration method of a hyperspectral image sensor, comprising: forming a bottom reflection layer on the surface of the photosensitive area of ​​a CMOS image sensor wafer; adopting multiple thin film deposition processes and multiple photolithography and etching processes A plurality of stepped structures are formed on the bottom reflective layer to form a transparent cavity layer; a thin film is deposited on the transparent cavity layer to form a top reflective layer. The monolithic integration method of the hyperspectral image sensor provided by the present invention realizes the precise control of the thickness of each step of the transparent cavity layer by controlling the thin film deposition process conditions, and optimizes the accumulation of inhomogeneity caused by the etching process in the prior art The problem. The invention also provides a hyperspectral image sensor and an imaging device containing the hyperspectral image sensor.

Description

technical field [0001] The invention relates to the technical field of hyperspectral imaging, in particular to a monolithic integration method of a hyperspectral image sensor, a sensor and an imaging device. Background technique [0002] Hyperspectral imaging technology is widely used in remote sensing detection, food safety monitoring, and biomedical technology. At present, a preparation method for the preparation of hyperspectral image sensors is to integrate the photosensitive region of the CMOS image sensor and the multi-band filter monolithically. The hyperspectral image sensor made by this preparation method has small volume and fast analysis and low cost features. Among them, the filter located on the top of the CMOS image sensor is usually a Fabry-Pérot interferometer (Fabry-Pérot interometers), which includes two opposite reflective layers with high reflectivity: a bottom reflective layer and a top reflective layer. A transparent cavity layer (Transparent Cavity L...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/14625H01L27/14643H01L27/14685H01L27/14689
Inventor 高建峰白国斌李俊杰杨涛李俊峰王文武
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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