Preparation method of semiconductor laser

Abstract

The invention relates to the technical field of semiconductor lasers, in particular to a preparation method of a semiconductor laser. The method comprises the following steps of providing an epitaxialstructure of a laminated semiconductor laser, wherein the epitaxial structure comprises an aluminum-containing epitaxial layer; performing dry etching on the epitaxial structure to form a strip-shaped structure with a steep and smooth side wall; carrying out wet oxidation on the strip-shaped structure, and forming oxidation dielectric layers at the two sides of the aluminum-containing epitaxial layer, wherein the oxidation dielectric layers are used as a transverse current limiting layer and a transverse waveguide layer of the laminated semiconductor laser. Through the transverse current limiting layer and the transverse waveguide layer, the transverse expansion of the working current of the semiconductor laser can be inhibited, so that the consistent current intensity and density are injected into each layer of quantum well active region, the threshold current of the laser is reduced, the transverse expansion of a light field is inhibited, and the laser spots with consistent size andintensity are realized.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a method for preparing a semiconductor laser. Background technique [0002] High-power semiconductor lasers usually adopt an edge emitting laser (Edge Emitting Laser, EEL) structure. In order to realize high-performance high-power semiconductor lasers with low current threshold, high quantum efficiency and low divergence angle, it is necessary to adopt a stacked semiconductor laser epitaxial structure including tunnel junctions and multiple quantum well active regions, and use dry or wet methods The etching process forms a reasonable shape and size of the semiconductor laser, and then uses methods such as sidewall passivation or ion implantation to limit the lateral expansion of injected carriers and optical fields. [0003] Using sidewall passivation technology to fabricate stacked high-power semiconductor lasers based on tunnel junctions, first perform wet deep et...

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Problems solved by technology

[0005] In view of this, an embodiment of the present invention provides a method for manufacturing a semiconductor laser to solve the problems of current lateral expansion and spot inconsistency based on stacked semiconductor lasers

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