A sapphire crystal growth furnace with multiple seed crystals replaceable by conductive film method

Abstract

The invention provides a sapphire crystal growth furnace with a film-conducting method with replaceable multiple seed crystals, which is provided with a base, a crystal growth furnace cavity, a crucible, a seed crystal rod, a sealing valve, and a seed crystal spare cabin in sequence from bottom to top. Cavity, seed crystal replacement plate, elevator, by improving a series of structures of the crucible feeding system, seed crystal replacement plate, seed crystal rod and spare seed crystal bin, it is possible to carry out one-pot crystal growth without cooling down the equipment, and adopt mechanical transmission The method takes out the crystal and replaces the seed crystal, re-seeds, and repeats the crystal growth process. Compared with the previous seed crystal replacement scheme, the present invention is not limited by the number of seeds in the seed crystal spare cabin, and the seed crystal can be opened multiple times for standby The crystal is removed from the chamber and replaced with a spare seed. On the premise that the crucible melt is sufficient, it can be grown continuously for 10‑20 times, which greatly improves the growth efficiency of sapphire crystal.

Description

technical field [0001] The invention belongs to the field of crystal growth, in particular to a sapphire crystal growth furnace with multiple seed crystals replaceable. Background technique [0002] Sapphire is an aluminum oxide (α-Al 2 o 3 ) single crystal, also known as corundum, is a unique combination of excellent optical, physical and chemical properties. As the hardest oxide crystal, artificial sapphire is used in various demanding fields due to its optical and physical properties. It can maintain its high strength, excellent thermal properties and transmittance at high temperatures, and has good thermal conductivity. Characteristics, excellent electrical and dielectric properties, and chemical corrosion resistance. With the rapid development of science and technology, artificial sapphire (Al 2 o 3 ) crystal has become an extremely important basic material in modern industry, especially microelectronics and optoelectronics industry, and is widely used in infrared ...

AI Technical Summary

Problems solved by technology

[0008] In order to solve the above defects that the crystal growth takes a long time and affects the quality, the present invention provides a sapphire crystal growth furnace with multiple seed crystals replaceable by the conductive film method, which is sequentially provided with a base, a crystal growth furnace cavity, Crucible, seed crystal rod, sealing valve, seed crystal spare chamber cavity, seed crystal replacement plate, elevator; one end of the base is fixedly installed on the outer bottom end of the growth furnace, and the other end is connected to the bottom of the crucible; the crucible is fixed Installed at the bottom of the inside of the crystal growth furnace cavity, the inside of the crucible is equipped with a mold; one end of the seed rod is connected with a seed crystal, which is lowered to directly above the mold for use, and the other end passes through the sealing valve and is fixedly installed on the seed crystal replacement plate The sealing valve is fixedly installed at the connection port between the crystal growth furnace cavity and the seed crystal backup cabin cavity; the seed crystal replacement plate is fixedly installed on the top of the seed crystal backup cabin cavity, and a plurality of sets of grooves are arranged throughout The seed crystal rod is fixedly installed inside the notch; the sealing valve is provided with a set of through holes, passing through a set of seed crystal rods; the elevator is connected to the seed crystal rod on the seed crystal replacement plate for multiple The lifting adjustment of the group seed rod

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