Circuit and electronic device

Abstract

The invention discloses a circuit and an electronic device. In an aspect, a circuit can include a first HEMT, a second HEMT, and a variable capacitor. A drain of the first HEMT can be coupled to a source of the second HEMT. An electrode of the variable capacitor can be coupled to a source of the first HEMT, and another electrode of the variable capacitor can be coupled to a gate of the second HEMT. In another aspect, an electronic device can include a die including a HEMT and a variable capacitor. An electrode of the variable capacitor can be coupled to a source or a gate of the HEMT, and another electrode of the variable capacitor can be coupled to an external terminal of the die. In a further aspect, an electronic device comprising a die, wherein the die includes a variable capacitor, afirst diode, and a second diode.

Description

technical field

[0001] The present disclosure relates to circuits and electronic devices, and more particularly to electronic devices including transistors and variable capacitors. Background technique

[0002] High electron mobility transistors can be made to operate at a variety of high voltages. However, above a certain voltage, such as 650V, the design of transistors may become more complex or may experience adverse effects on GaN-on-silicon substrates. For example, at voltages above 650V, the buffer layer may need to be significantly thicker and cause high mechanical stress that may cause the wafer to warp. Forming GaN layers over sapphire, SiC, growing GaN bulk substrates, or transferring GaN layers by substrate removal can be difficult at commercial production levels. Further improvements in high voltage circuits using high electron mobility transistors are desired. Contents of the invention

[0003] The problem addressed by the present invention is to increase t...

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