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Laser doped pattern of selective emitter PERC battery

A laser doping and emitter technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of long production time, difficult to realize, poor stability, etc., to avoid the problem of EL black edge and prevent misalignment Effect

Pending Publication Date: 2020-04-03
CECEP SOLAR ENERGY TECH (ZHENJIANG) CO LTD
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Problems solved by technology

This method can solve the problem of inaccurate alignment due to the deformation of the mesh cloth on both sides along the direction perpendicular to the advancing direction of the scraper under the pressure of the scraper and the deformation of the mesh cloth on one side parallel to the advancing direction of the scraper under the pressure of the scraper. When the laser pattern is not deformed in the initial processing, the alignment will be inaccurate, and it is difficult to realize in the mass production process, and the production time is long and the stability is poor.

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  • Laser doped pattern of selective emitter PERC battery
  • Laser doped pattern of selective emitter PERC battery
  • Laser doped pattern of selective emitter PERC battery

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Embodiment Construction

[0019] In order to deepen the understanding of the present invention, the present invention will be described in further detail below with reference to the embodiments and the accompanying drawings. The embodiments are only used to explain the present invention and do not constitute a limitation on the protection scope of the present invention.

[0020] A processing technology for a SE-PERC type solar cell selective emitter structure, comprising the following steps:

[0021] 1. Silicon wafer pretreatment: pre-cleaning and suede preparation of silicon wafers;

[0022] 2. Preparation of PN junction: Diffusion on the front side of P-type silicon to form N-type emitter;

[0023] 3. Laser doping: Laser doping is carried out on the front side of N-type silicon to form laser grooves, which correspond to the front-side silver sub-grid lines;

[0024] 4. Silicon wafer reprocessing: remove the phosphosilicate glass and surrounding PN junctions formed during the diffusion process, and p...

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Abstract

The invention discloses a laser doped pattern of a selective emitter PERC battery, which comprises a plurality of groups of mutually parallel main body modules, each main body module comprises two mutually parallel straight lines, and two ends of each straight line are respectively provided with an outwards bent arc. According to the scheme, the arcs are arranged to be bent upwards and outwards atthe same time, the situation that a positive electrode screen printing plate deforms outwards and towards the two sides during PERC battery machining can be right coped with, and therefore the alignment problem of a laser groove after a screen printing plate deforms is solved, and the laser doped pattern can be suitable for batch production, short in process time and good in stability.

Description

technical field [0001] The invention relates to a laser doping pattern of a selective emitter PERC cell. Background technique [0002] At present, the laser doping pattern of the selective emitter PERC cell is an equidistant straight line pattern. Each line in this pattern corresponds to the front-side silver sub-grid line one by one. When the front-side silicon nitride film is etched and the front-side silver electrode is printed, the paste falls into the laser groove to form the front-side silver sub-gate line. During the printing process of the front silver electrode of the solar cell, the mesh cloth will be deformed under the pressure of the scraper, which will cause the front silver electrode actually printed on the silicon wafer to shift, and the front silver sub-grid line and the laser doped area will easily appear. Inaccurate problem. [0003] In order to solve the above problems, Chinese patent CN208690277U discloses a P-type SE-PERC double-sided solar cell, which...

Claims

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Application Information

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IPC IPC(8): H01L31/0236H01L31/05H01L31/0224
CPCH01L31/022425H01L31/022433H01L31/0236H01L31/0508Y02E10/50
Inventor 贾佳邱家梁王丽婷黄惜惜周肃杨睿
Owner CECEP SOLAR ENERGY TECH (ZHENJIANG) CO LTD
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