Supercharge Your Innovation With Domain-Expert AI Agents!

Preparation method and device of tantalum nitride film resistor

A technology of thin film resistors and thin film resistors, which is applied in the direction of ion implantation plating, coating, metal material coating technology, etc., can solve the problems of service life not reaching the design value, low qualification rate of tantalum nitride thin film resistors, etc. , to achieve the effect of long service life, high pass rate and improved production efficiency

Inactive Publication Date: 2020-04-10
SUZHOU OFT OPTICAL TECH CO LTD
View PDF9 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a preparation method and preparation equipment for tantalum nitride thin film resistors, to solve the problem of low pass rate of tantalum nitride thin film resistors produced by traditional tantalum nitride thin film resistor preparation methods and preparation equipment, and The problem that the service life cannot reach the design value

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method and device of tantalum nitride film resistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The method and equipment for manufacturing a tantalum nitride thin film resistor proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0028] The invention provides a kind of preparation equipment of tantalum nitride film resistor, such as figure 1 As shown, it includes a vacuum chamber 1, a rotating device 2, an air pump group 3, a gas supply device 4, a magnetic control device 5, a thermal resistance evaporation device 6, an AR ion cleaning device 7 and an electron beam evaporation device 8; the air pump group 3 and the gas supply device 4 pass through...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method and device of a tantalum nitride film resistor, and belongs to the technical field of resistor preparation. The preparation method and device of the tantalum nitride film resistor comprise a vacuum chamber, a rotating device, a pumping set, an air supply device, a magnetic control device, a thermal resistance evaporation device, an AR ion cleaning device and an electron beam evaporation device; and the pumping set ensures that the vacuum chamber is in a vacuum state, AR ion rotary cleaning, tantalum nitride film resistance layer coating, titanium metal coating, noble metal coating and etching pattern preparation processes are all completed under vacuum conditions. Compared with the conventional preparation process under the traditional natural environment, the produced tantalum nitride film resistor has higher qualified rate, longer service life and greatly improved production efficiency.

Description

technical field [0001] The invention relates to the technical field of resistor preparation, in particular to a method and equipment for preparing a tantalum nitride thin film resistor. Background technique [0002] Resistors are an indispensable electronic component of all types of electronic equipment, and one of the most used components in all electronic circuits. In recent years, the rapid development of electronic information technology has continuously put forward new requirements for electronic component technology, and the resistor technology has also been completely developed, which has been developed from traditional wire-wound resistors, metal film resistors, graphite resistors and chip thick film resistors. Become the current chip thin film resistor. At the same time, since the 21st century, the complex military environment and the blowout development of miniaturized consumer electronics require resistors to have high reliability and high adaptability. Therefor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/35C23C14/30C23C14/26C23C14/06C23C14/02C23C14/50C23C14/58C23C14/14
CPCC23C14/35C23C14/0036C23C14/30C23C14/26C23C14/0641C23C14/022C23C14/505C23C14/5873C23C14/14
Inventor 林鹏赵培
Owner SUZHOU OFT OPTICAL TECH CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com