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A palladium single-atom-doped indium oxide composite material and its preparation and application

A technology of composite materials and indium oxide, which is applied in the fields of material resistance, material analysis, and material analysis by electromagnetic means, can solve the problems of low specificity, lack of consistency, and inconsistency of catalytic activity, and achieve high catalytic activity, super Highly selective detection, the effect of improving the gas response value

Active Publication Date: 2021-04-06
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for this method, first of all, during the doping process, due to the catalyst size dispersion effect, catalyst particles of various scales (such as single atoms, clusters, nanoparticles, aggregates, etc.) , causing its catalytic activity to show diversity and lack of consistency; secondly, the inconsistency of catalytic activity makes the sensor produce a "superimposed" response to different gas molecules, resulting in limited selectivity and low specificity of the sensor

Method used

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  • A palladium single-atom-doped indium oxide composite material and its preparation and application
  • A palladium single-atom-doped indium oxide composite material and its preparation and application
  • A palladium single-atom-doped indium oxide composite material and its preparation and application

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031]A palladium oxide composite material, the preparation method thereof, can include:

[0032]Step A1, 200 mg of nitrate, 100 mg of amphimenzoic acid, 16 g of acetone, 18 g n, N-dimethylformamide together, stirred for 1 h, 3 ml of deionized water, then placed in a closed environment of 140 ° C The reaction is 6 h, then the solid-liquid separation and washed, thereby producing an indium organic frame material;

[0033]Step B1, 80 mg of indium an organic frame material is dispersed into 50 ml of deionized water, adding an appropriate amount of hydrochloric acid, so that the pH of the mixture is 3, then 0.2 mg of nitrate, stir for 24 h, solid-liquid separation, washing and drying, obtained Palladium ion modified indium organic frame composite material;

[0034]Step C1, the obtained palladium ion modified indium annealing treatment, the annealing temperature is 600 ° C, the temperature rise rate is 10 ° C / min, the annealing time is 3 h, thereby obtaining palladium single atom-doped oxidatio...

Embodiment 2

[0036]A palladium oxide composite material, the preparation method thereof, can include:

[0037]Step A2, 250 mg of nitrate, 120 mg of benzene terephthalic acid, 25 g of acetone, 25 g n, N-dimethylformamide together, stirred for 2 h, 2 ml of deionized water, then placed in a closed environment of 150 ° C Reaction 4h, then solid-liquid separation and washing, thereby producing indium organic frame materials;

[0038]Step B2, 80 mg of indium organic frame material is dispersed into 40 ml of deionized water, adding an appropriate amount of hydrochloric acid, so that the pH of the mixture is 4, then add 4 mg of tetra ammonia to palladium nitrate, stir for 24 h, solid-liquid separation, washing and drying To obtain a palladium ion-modified indium organic frame composite material;

[0039]Step C2, the obtained palladium ion-modified indium annealing treatment is performed, the annealing temperature is 500 ° C, the temperature rise rate is 8 ° C / min, the annealing time is 2 h, thereby obtaining a...

Embodiment 3

[0041]A palladium oxide composite material, the preparation method thereof, can include:

[0042]Step A2, 220 mg of nitric acid, 140 mg of terephthalic acid, 25 g of acetone, 28 g n, N-dimethylformamide together, stirred for 2 h, 4 ml of deionized water, then placed in a closed environment of 150 ° C Reaction 4h, then solid-liquid separation and washing, thereby producing indium organic frame materials;

[0043]Step B2, 90 mg of indium an organic frame material is dispersed into 50 ml of deionized water, adding an appropriate amount of hydrochloric acid, so that the pH of the mixture is 5, then add 0.2 mg of calcium nitrate, stir for 10 h, solid-liquid separation, washing, and drying, obtained Palladium ion modified indium organic frame composite material;

[0044]Step C2, the obtained palladium ion-modified indium annealing treatment is performed, the annealing temperature is 500 ° C, the temperature rise rate is 5 ° C / min, the annealing time is 3 h, thereby obtaining palladium single ato...

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Abstract

The invention belongs to the field of single-atom-level catalyst materials, and discloses a palladium single-atom-doped indium oxide composite material and its preparation and application, wherein the preparation method includes the following steps: (1) using indium nitrate, isophthalic acid, acetone , N, N-dimethylformamide, and deionized water to prepare indium-based organic framework materials; (2) load palladium ions on the indium-based organic framework materials to obtain palladium-ion-modified indium-based organic framework composite materials; (3) carry out Annealed to obtain palladium single atom doped indium oxide composite material. The present invention improves the key overall flow process design of the preparation method, uses indium-based organic framework materials to load palladium ions, and then finally obtains palladium single-atom-doped indium oxide composite materials through annealing, which can be effectively compared with the prior art. Solve the problem that catalyst particles of various scales may exist in metal oxides doped with noble metal nanocatalysts, and realize the loading modification of palladium single atoms.

Description

Technical field[0001]The present invention belongs to the field of monogen-type catalyst materials, and more particularly to a palladium single atom-doped indium oxide composite material and its preparation and application thereof.Background technique[0002]Chemical resistance type semiconductor gas sensor is a component that converts information such as gas components and content into electrical information. Due to its characteristics of low cost, small size, easy integration, and fast response, it is widely used in environmental monitoring, public safety, medical diagnosis, and defense space. However, long-term studies have found that resistive semiconductor gas sensors face poor selectivity in practical applications, which seriously limits the rapid development of gas sensors and extensive application needs.[0003]The performance regulation and optimization of semiconductor gas sensors is the basis and determinants of their applications, how to improve the selectivity of gas sensor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/12
CPCG01N27/126
Inventor 段国韬刘波
Owner HUAZHONG UNIV OF SCI & TECH