Novel ark structure

An ark and a new type of technology, applied in the field of new ark structures, can solve the problems of the surface of the silicon wafer and the surface of the ark board being not tightly attached, it is difficult to obtain a uniform electric field, and the production capacity is low.
CN110993543AActive Publication Date: 2020-04-10LAPLACE RENEWABLE ENERGY TECH CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
LAPLACE RENEWABLE ENERGY TECH CO LTD
Publication Date
2020-04-10

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a novel ark structure. The novel ark structure comprises an ark frame, first ark plates, second ark plates and a flow uniformizing plate. Flow uniformizing plates are arrangedat the top and the bottom of the ark frame, and the first boat plates and the second boat plates are arranged between the top flow uniformizing plate and the bottom flow uniformizing plate at intervals. The novel ark structure is simple in structure, and a reinforced electric field is formed between the ark plates.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the field of semiconductor or photovoltaic material processing, more specifically, it relates to a novel ark structure of semiconductor or photovoltaic material processing equipment. Background technique

[0002] Semiconductor or photovoltaic materials are widely used in electronics, new energy and other industries. Semiconductor and photovoltaic materials usually require chemical treatment before they can be applied to products. CVD technology is one of the processing methods. CVD is chemical vapor deposition. CVD technology is currently It has been widely used in the processing of semiconductor or photovoltaic materials. Common processing equipment includes PECVD, LPCVD, APCVD, etc. In addition to CVD, there are also diffusion processes, such as phosphorus diffusion, boron diffusion, etc., which can use gas diffusion to treat raw materials. Processing. At present, there are many related equipment in the industry. The correspo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More