Novel ark structure

An ark and a new type of technology, applied in the field of new ark structures, can solve the problems of the surface of the silicon wafer and the surface of the ark board being not tightly attached, it is difficult to obtain a uniform electric field, and the production capacity is low.

Active Publication Date: 2020-04-10
LAPLACE RENEWABLE ENERGY TECH CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The following problems exist in the current equipment: the graphite ark is usually large in size, generally reaching about 2 meters, and the electric field will have a large difference from the tail to the front of the entire graphite ark, and it is difficult to obtain a uniform electric field
Since the silicon wafer needs to be placed vertically, the surface of the silicon wafer will not be tightly bonded to the surface of the boat board, which will lead to poor electrical conductivity of the silicon wafer. The risk of rewinding, resulting in an increase in the rate of defective products
The overall production capacity of the equipment is still low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Novel ark structure
  • Novel ark structure
  • Novel ark structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0027] Such as figure 1 As shown, the novel ark structure includes an ark frame 7, a first boat plate 1-1, a second boat plate 1-2, and a smoothing plate 3; the top and bottom of the ark support are provided with a smoothing plate 3; multiple first boats The plate 1-1 and the second boat plate 1-2 are arranged at intervals between the top even flow plate 3 and the bottom even flow plate 3 . The space for placing alternately arranged first boat boards 1-1 and second boat boards 1-2 is provided by the ark frame 7 as a whole. Among them, the arrangement of the flow uniform plate 3 eliminates the situation that the top and bottom processing effects are not good.

[0028] The ark frame 7 includes a fixing column 8 , a bottom plate 9 and a top fixing frame 10 . The fixing column 8 connects the bottom plate 9 and the top fixing frame 10; both ends of the fixing column 8 are fixed on the bottom plate 9 and the top fixing frame 10 by welding. Electrode column fixing holes 11 are pro...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a novel ark structure. The novel ark structure comprises an ark frame, first ark plates, second ark plates and a flow uniformizing plate. Flow uniformizing plates are arrangedat the top and the bottom of the ark frame, and the first boat plates and the second boat plates are arranged between the top flow uniformizing plate and the bottom flow uniformizing plate at intervals. The novel ark structure is simple in structure, and a reinforced electric field is formed between the ark plates.

Description

technical field [0001] The invention relates to the field of semiconductor or photovoltaic material processing, more specifically, it relates to a novel ark structure of semiconductor or photovoltaic material processing equipment. Background technique [0002] Semiconductor or photovoltaic materials are widely used in electronics, new energy and other industries. Semiconductor and photovoltaic materials usually require chemical treatment before they can be applied to products. CVD technology is one of the processing methods. CVD is chemical vapor deposition. CVD technology is currently It has been widely used in the processing of semiconductor or photovoltaic materials. Common processing equipment includes PECVD, LPCVD, APCVD, etc. In addition to CVD, there are also diffusion processes, such as phosphorus diffusion, boron diffusion, etc., which can use gas diffusion to treat raw materials. Processing. At present, there are many related equipment in the industry. The correspo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/673H01L31/18
CPCH01L31/18H01L21/67326Y02P70/50
Inventor 徐栋林佳继刘群朱太荣林依婷
Owner LAPLACE RENEWABLE ENERGY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products