Negative photosensitive resin composition, semiconductor device and electronic device
A technology of photosensitive resin and composition, applied in optomechanical equipment, semiconductor/solid-state device manufacturing, photosensitive materials for optomechanical equipment, etc.
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no. 1 Embodiment approach ＞
[0057] 1. Semiconductor device
[0058] figure 1 It is a longitudinal sectional view showing the first embodiment of the semiconductor device of the present invention. figure 2 yes figure 1 A partial enlargement of the area enclosed by the dashed line in . In the instructions below, the figure 1 The upper side is called "upper" and the lower side is called "lower".
[0059] figure 1 The illustrated semiconductor device 1 has a so-called package-on-package structure including a through-electrode substrate 2 and a semiconductor package 3 mounted thereon.
[0060] Among them, the through electrode substrate 2 includes: an organic insulating layer 21 (resin film); a plurality of through wirings 22 penetrating from the upper surface of the organic insulating layer 21 to the lower surface; a semiconductor chip 23 embedded in the organic insulating layer 21. inside; a lower wiring layer 24 provided on the lower surface of the organic insulating layer 21; an upper wiring layer ...
no. 2 Embodiment approach ＞
[0151] Next, a second embodiment of the semiconductor device of the present invention will be described.
[0152] Figure 5 It is a longitudinal cross-sectional view showing a second embodiment of the semiconductor device of the present invention. Figure 6 yes Figure 5 A partial enlargement of the area enclosed by the dashed line in . In the instructions below, the Figure 5 The upper side in is called "upper", and the lower side is called "lower".
[0153] Hereinafter, the second embodiment of the semiconductor device will be described focusing on differences from the above-mentioned first embodiment, and descriptions of the same items will be omitted.
[0154] 1. Semiconductor device
[0155] The semiconductor device 1 of the second embodiment is different from the semiconductor device of the above-mentioned first embodiment in that the structure of the penetrating wiring formed in the organic insulating layer 21 is different, and the upper wiring layer 25 uses a phot...
Embodiment 1
[0341] First, the raw materials shown in Table 1 and Table 2 were dissolved in propylene glycol monomethyl ether acetate (PGMEA) to prepare solutions.
[0342] Next, the prepared solution was filtered through a polypropylene filter with a pore diameter of 0.2 μm to obtain a negative photosensitive resin composition.
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Abstract
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