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Interdigital structure integrated Schottky barrier diode temperature sensor and manufacturing method thereof

A technology of temperature sensor and interdigital structure, which is applied to thermometers, thermometers and instruments using electric/magnetic elements that are directly sensitive to heat, can solve the problem of low sensitivity of diode temperature sensors, and improve sensitivity and temperature sensitivity The effect of raising and lowering the turn-on voltage

Active Publication Date: 2020-04-21
宁波铼微半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Solve the technical problem of low sensitivity of the diode in the prior art as a temperature sensor

Method used

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  • Interdigital structure integrated Schottky barrier diode temperature sensor and manufacturing method thereof
  • Interdigital structure integrated Schottky barrier diode temperature sensor and manufacturing method thereof
  • Interdigital structure integrated Schottky barrier diode temperature sensor and manufacturing method thereof

Examples

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Effect test

Embodiment 1

[0040] This embodiment provides a Schottky barrier diode temperature sensor integrated with an interdigital structure.

[0041] refer to figure 1 , the schottky barrier diode temperature sensor integrated with interdigital structure includes substrate layer 1, buffer layer 2, n + - GaN layer 3, interdigitated structures and connections; said interdigitated structures comprise n - -GaN layer 4, ohmic electrode 6, and Schottky electrode 7; the interdigital structures are connected through the connecting portion; the connection method includes series connection, wherein the series connection is to connect the ohmic electrode 6 and the Schottky electrode 7 in series. It is mainly emphasized that the connection methods are various and can be selected according to needs. The connection method in this embodiment is through gold wires, and it can also be through connection methods such as air bridges.

Embodiment 2

[0043] This embodiment provides a Schottky barrier diode temperature sensor integrated with an interdigital structure.

[0044] refer to figure 2 with image 3 , The difference between this embodiment and Embodiment 1 is that the connection part in the Schottky barrier diode temperature sensor integrated with the interdigital structure includes a Pad electrode 8 and an air bridge electrode 9, and the Schottky barrier diode integrated with the interdigital structure The base barrier diode temperature sensor also includes a dielectric layer 5, which is arranged on the n - - between GaN layer 4 and said Schottky electrode 7 .

Embodiment 3

[0046] This embodiment provides a Schottky barrier diode temperature sensor integrated with an interdigital structure.

[0047] refer to Figure 4 with Figure 5, The difference between this embodiment and Embodiment 2 is that the interdigital structures are connected in series and in parallel.

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Abstract

The invention relates to an interdigital structure integrated Schottky barrier diode temperature sensor and a manufacturing method thereof. The diode comprises a substrate layer, a buffer layer, an n<+>-GaN layer, an interdigital structure and a connecting part which are arranged in sequence, wherein the interdigital structure comprises an n <->-GaN layer, an ohmic electrode and a Schottky electrode; the interdigital structures are connected through the connecting part; the connection mode comprises series connection. The temperature sensor is connected in series and integrated through the Schottky barrier diodes of the interdigital structure, and the sensitivity of the temperature sensor can be improved. Compared with the conventional Schottky barrier temperature sensor, the Schottky barrier diode temperature sensor integrated with the interdigital structure has the advantage that the temperature sensitivity is doubled so that the ambient temperature can be effectively detected.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power device integration, and in particular relates to a Schottky barrier diode temperature sensor integrated with an interdigital structure and a manufacturing method. Background technique [0002] GaN-based devices with low power loss and high switching speed are essential for improving power density and energy efficiency in power electronics applications. Its applications in electric vehicle and smartphone charging stations, photovoltaic inverters, data center power supplies, etc. have many advantages. However, severe heat dissipation during on-state conduction and on / off switching cycles results in high junction temperatures, which will greatly deteriorate safe and reliable operation. [0003] However, the temperature detection of the existing GaN-based power devices mainly adopts a single circular titanium nitride Schottky diode or a pn junction diode, and its temperature sensitivity i...

Claims

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Application Information

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IPC IPC(8): H01L31/108H01L31/0224H01L31/18G01K7/00
CPCG01K7/00H01L31/022408H01L31/108H01L31/18Y02P70/50
Inventor 敖金平李小波李柳暗蒲涛飞
Owner 宁波铼微半导体有限公司
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