Polishing pad cleaning and washing device

Abstract

The invention provides a polishing pad cleaning and washing device. The polishing pad cleaning and washing device comprises a brush structure, wherein the brush structure comprises a disc face brush capable of rotating in the circumferential direction, and the disc face brush is used for making contact with a polishing pad in an abutting mode and cleaning the polishing pad in a rotating mode; thedisc face brush is arranged on a brush arm, one end of the brush arm is connected to a lifting part, the lifting part is provided with a rotation driving part which can drive the brush arm to swing inthe horizontal direction and can drive the disc face brush to rotate in the circumferential direction, and a pressure washing structure is arranged on one side of the disc face brush and used for repairing the polishing pad; and the polishing pad cleaning and washing device further comprises a control part, and the control part is used for controlling the rotating state of the disc face brush, the rotating state of the brush arm, the lifting state of the lifting part and the washing state of the pressure washing structure. The device can wash, clean and moisturize the polishing pad by using the disc surface brush, and finishes the polishing pad by using the pressure washing structure, thereby preventing damage of a new silicon wafer caused by smudginess and wear of the polishing pad.

Description

technical field [0001] The invention relates to the technical field of silicon wafer grinding, in particular to a polishing pad cleaning device. Background technique [0002] As an important semiconductor material, single crystal silicon has good electrical properties and thermal stability, and it has replaced other semiconductor materials soon after it was discovered and utilized. Silicon material has become the most widely used semiconductor material because of its high temperature resistance and radiation resistance, and is especially suitable for making high-power devices. Most integrated circuit semiconductor devices are made of silicon materials. Among the methods for manufacturing silicon single crystals with good performance, the Czochralski method for growing silicon single crystals has relatively simple equipment and processes, and is easy to realize automatic control. After the Czochralski monocrystalline silicon rod is pulled out of the single crystal furnace, a...

AI Technical Summary

Problems solved by technology

[0003] Among them, in the mid-term grinding process, the silicon wafer and the grinding disc belong to dry friction, which can easily cause the surface of the grinding disc to heat up and be damaged. At the same time, the heat will burn the silicon wafer.

There are foreign objects on the polishing pad, which will scratch the silicon wafer during processing or fall on the silicon wafer, affecting the performance of the silicon wafer

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