Reactance matching type and distributed type integrated ultra-wideband power chip circuit

Abstract

The invention discloses a reactance matching type and distributed type fused ultra-wideband power chip circuit. The respective advantages of a reactance matching type circuit matching structure and adistributed type circuit matching structure are fused; a reactance matching type structure is adopted in a radio frequency power output stage of the ultra-wideband power amplifier circuit, so impedance matching can be easily and accurately output to improve the efficiency; and the power driving stage adopts a distributed structure, so the circuit bandwidth is easy to expand and the gain flatness is easy to improve. The advantages of the two circuit structures are fused, and the performance of the millimeter-wave ultra-wideband high-power monolithic integrated power amplifier can be greatly improved.

Description

technical field [0001] The invention relates to a single-chip microwave integrated circuit, in particular to an ultra-broadband power chip circuit combining reactance matching and distribution. Background technique [0002] With the rapid development of information technology, modern radar, communication, and instrumentation test systems need to achieve large capacity, high-speed data transmission and high reliability, which requires ultra-wideband power amplifiers as support. [0003] There are two topologies of reactance matching and distributed amplifiers in traditional UWB power amplifier chip implementations. The reactance-matched broadband structure has the advantages of good impedance matching, large output power and efficiency, but its input VSWR performance is poor, which affects the overall gain performance of the circuit, and the bandwidth is obviously restricted, usually only 3 times around the frequency range. The frequency bandwidth of the distributed structu...

AI Technical Summary

Problems solved by technology

The reactance-matched broadband structure has the advantages of good impedance matching, large output power and efficiency, but its input VSWR performance is poor, which affects the overall gain performance of the circuit, and the bandwidth is obviously restricted, usually only 3 times About frequency

The frequency bandwidth of the distributed structure can reach dozens of octaves, and the input standing wave ratio and output standing wave ratio are small at the same time. The structure is simple and easy to implement, but its output power is obviously limited, and it is difficult to achieve high power and high efficiency amplifier chip

[0004] In order to realize high-power, high-efficiency ultra-wideband power amplifiers, especially for millimeter-wave frequency bands, the gain of transistors is low, and the simple use of distributed or reactance matching topology can no longer exert the ultimate performance of the device.

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