Sputtering apparatus and method for producing semiconductor device with the same

Abstract

A conductive layer is formed in an area where a gate electrode is to be formed and in an area where a source and drain diffusion layer is to be formed on a semiconductor substrate. Then, a metal film is formed on the conductive layer by sputtering a target for sputtering with a grounded charge trap member provided between the garget and the conductive layer.

Description

technical field [0001] The invention relates to a sputtering device suitable for manufacturing a semiconductor device with a gate oxide film, and a method for manufacturing a semiconductor device with a MOS transistor using the sputtering device, in particular to a sputtering device, and using the sputtering device to manufacture A semiconductor device method for preventing a decrease in the initial withstand voltage of an oxide film. Background technique [0002] In order to increase the operating speed of the element, a method has been adopted in which a refractory metal silicide layer is formed on the surface of the gate electrode and / or the diffusion layer region of the transistor. Specifically, US Pat. No. 4,855,798 discloses a method for forming such a silicide layer in a self-aligned manner. The conventional method of forming a titanium silicide layer as a silicide layer in a self-aligned manner will be described below. 1A to 1G are cross-sectional views illustratin...

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Problems solved by technology

[0013] However, when using the above-mentioned DC magnetron sputtering device to manufacture semiconductor devices as described above, there is a problem that a short circuit will occur between the gate and the substrate, and the required transistor characteristics cannot be obtained.

[0014] The short circuit between the gate and the substrate is due to the drop in the initial withstand voltage of the gate oxide film

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