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Method and device for removing carbon-containing impurities in high-purity chlorosilane production

A chlorosilane, high-purity technology, applied in the direction of halosilane, chemical instruments and methods, silicon compounds, etc., can solve the problem of inability to deeply remove carbon-containing impurities in chlorosilane

Active Publication Date: 2020-05-08
CHINA SILICON CORP LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention aims to provide a method and device for removing carbon-containing impurities in the production of high-purity chlorosilanes, so as to solve the technical problem that the ordinary rectification method in the prior art cannot deeply remove carbon-containing impurities in chlorosilanes

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  • Method and device for removing carbon-containing impurities in high-purity chlorosilane production
  • Method and device for removing carbon-containing impurities in high-purity chlorosilane production
  • Method and device for removing carbon-containing impurities in high-purity chlorosilane production

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Embodiment approach

[0036] According to a typical embodiment of the present invention, the rectification device includes a first rectification tower and a second rectification tower arranged in series, the pressure in the first rectification tower is 0.4-0.5Mpa, and the reflux ratio is 4-6; The pressure in the second rectification tower is 0.2-0.35Mpa, and the reflux ratio is 4-6; the pressure difference between the first rectification tower and the second rectification tower is maintained at 5-20kpa. High boiling point components and low boiling point components are removed in the first rectification tower and the second rectification tower respectively.

[0037]According to a typical embodiment of the present invention, the method further includes the step of sending the high-purity chlorosilane to the rectification product tank area through the pipeline, and the step of regenerating the adsorption device after the adsorption device is saturated. Preferably, the adsorption device includes two s...

Embodiment 1

[0048] In this example, refer to figure 1 As shown, the device for removing carbon-containing impurities in the production of high-purity chlorosilane mainly includes the first rectification tower 10 (wire mesh packing), the second rectification tower 20 (wire mesh packing), 1# adsorption column 30 (inner lining polytetrafluoroethylene 304 material) and 2# adsorption column 40 (lining polytetrafluoroethylene 304 material). The basic structure of the macroporous aminophosphonic acid chelating resin is polystyrene grafted with divinylbenzene, which has a spherical particle structure. The diameter of the spherical particles is 0.38-0.5mm, the specific gravity is 1.10-1.15, and the expansion is reversible. It is 55-65%, and the upper limit of use temperature is 80°C. The mass ratio of the amino-rich resin adsorbent to the platinum catalyst is 9.5:1, and the platinum catalyst is an immobilized platinum catalyst.

[0049] Taking the rectification of trichlorosilane as an example, ...

Embodiment 2

[0055] In this example, refer to figure 1 As shown, the device for removing carbon-containing impurities in the production of high-purity chlorosilane mainly includes the first rectification tower 10 (wire mesh packing), the second rectification tower 20 (wire mesh packing), 1# adsorption column 30 (inner lining polytetrafluoroethylene 304 material) and 2# adsorption column 40 (lining polytetrafluoroethylene 304 material). The basic structure of the macroporous aminophosphonic acid chelating resin is polystyrene grafted with divinylbenzene, which has a spherical particle structure. The diameter of the spherical particles is 0.38-0.5mm, the specific gravity is 1.10-1.15, and the expansion is reversible. It is 55-65%, and the upper limit of use temperature is 80°C. The mass ratio of amino-rich resin adsorbent to platinum catalyst is 8.8:1.

[0056] Taking the rectification of trichlorosilane as an example, the process flow includes three steps of rectification purification, ad...

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Abstract

The invention discloses a method and device for removing carbon-containing impurities in high-purity chlorosilane production. The method comprises the following steps: S1, removing a high-boiling-point component and a low-boiling-point component from a trichlorosilane raw material in a rectification device to obtain rectified trichlorosilane; and S2, feeding the rectified trichlorosilane into an adsorption device to remove methyl chlorosilane to obtain high-purity chlorosilane, wherein the adsorption device is filled with a resin type adsorbent rich in amino and a platinum catalyst. Accordingto the technical scheme of the invention, an amino-rich resin type adsorbent having affinity with methyl chlorosilane is utilized; methyl chlorosilane impurities are removed through an adsorption process under the action of a platinum catalyst, so that the total content of the methyl chlorosilane impurities in a rectification product in the polycrystalline silicon production process is reduced tobe 50 ppb or less, and high-purity chlorosilane with the high purity of 4 N or above and the carbon impurity content of less than 50 ppb is produced.

Description

technical field [0001] The invention relates to the technical field of chemical industry, in particular to a method and device for removing carbon-containing impurities in the production of high-purity chlorosilane. Background technique [0002] With the development of the photovoltaic industry, the market has higher and higher requirements for product quality. This puts forward higher requirements for the control of rectification products in the polysilicon production process. [0003] In rectification products, the level of impurity content is very important to the quality of polysilicon products, so the impurities must be controlled at a sufficiently low level, or even completely removed. The separation of impurity components can generally be achieved in the process of rectification and purification, and most of the impurities can also be removed in the high and low boiling of the rectification system. However, the trace impurities in the rectification product cannot be...

Claims

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Application Information

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IPC IPC(8): C01B33/107
CPCC01B33/10784C01P2006/80Y02P20/10
Inventor 杨典万烨赵雄孙强王芳付强裴蕾张征
Owner CHINA SILICON CORP LTD
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