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Electrically pumped quantum dot single photon source and preparation method thereof

A single photon source and quantum dot technology, which is applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of low luminous efficiency, poor practicability and portability of quantum dot single photon sources, and achieve improved practicability and portability, Enhance quantum dot luminescence and alleviate the effect of low luminous intensity

Active Publication Date: 2021-08-27
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0006] In view of the above-mentioned technical problems, the object of the present invention is to provide an electrically pumped quantum dot single photon source and its preparation method to alleviate the poor practicability and portability of the optically pumped quantum dot single photon source existing in the prior art. , and the technical problem of low luminous efficiency of quantum dot single photon source

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  • Electrically pumped quantum dot single photon source and preparation method thereof
  • Electrically pumped quantum dot single photon source and preparation method thereof
  • Electrically pumped quantum dot single photon source and preparation method thereof

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[0044] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, not all of them. the embodiment. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0045] The quantum dots used at this stage are mainly prepared by two methods, one is epitaxial quantum dots grown by physical methods, and the other is colloidal quantum dots synthesized by wet chemical methods. Epitaxial quantum dots obtained through the Stranski-Krastanov self-organized growth mode are now used as light sources in ultrafast semiconductor lasers and optical amplifi...

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Abstract

The invention provides an electrically pumped quantum dot single photon source and a preparation method thereof, the method comprising: step S101: preparing a III-V compound quantum well light-emitting chip; step S102: on the III-V compound quantum well light-emitting chip Make metal holes; Step S103: Introduce quantum dots on the surface of the chip produced in step S102 to complete the fabrication of the device. The electrical pumping quantum dot single photon source and its preparation method of the present invention alleviate the optical pumping quantum dots existing in the prior art. The practicability and portability of the point single photon source are poor, and the technical problems of the low luminous efficiency of the quantum dot single photon source have achieved the improvement of the practicability and portability of the single photon source, and the improvement of the luminous efficiency of the quantum dot single photon source technical effect.

Description

technical field [0001] The invention relates to the technical field of single photon sources, in particular to an electrically pumped quantum dot single photon source and a preparation method thereof. Background technique [0002] In recent years, single photon source (SPS) technology has made breakthroughs in the field of quantum information, and it has active performance in quantum communication, quantum computing, quantum lithography and quantum cryptography. Especially in quantum cryptography, now, not only is quantum key distribution (QKD) theoretically proven possible, but QKD has been developed in many ways since the original proposal in 1984 and the first experiments in 1992 confirmed. Due to the advantages of strong confidentiality, good security and fast running speed in quantum computers, quantum communication has attracted widespread attention. In order to ensure that quantum information is not leaked during communication, the ideal single photon source for qua...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/50
CPCH01L33/06H01L33/502H01L2933/0041
Inventor 许兴胜靳思玥秦璐
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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