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Semiconductor thin film preparation device and preparation method

A thin-film preparation and semiconductor technology, which is applied to the semiconductor thin-film preparation device and the preparation field, can solve problems such as thin film thickness, and achieve the effects of saving energy, speeding up deposition and reducing production costs.

Inactive Publication Date: 2020-06-02
何元金
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a semiconductor thin film preparation device and preparation method to solve the technical problem of thin film thickness in the prior art

Method used

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  • Semiconductor thin film preparation device and preparation method
  • Semiconductor thin film preparation device and preparation method

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Experimental program
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Embodiment 1

[0076] Embodiment 1: with ZnTe 1-x o x Taking the development of a thermoelectric thin film as an example, the preparation method of the above-mentioned semiconductor thin film is described as follows.

[0077] Take by weighing ZnTe (purity 99.99%) powder 10g (component A) and be placed in the evaporation source device 5 that is positioned at stepped hole 14 places, take by weighing ZnO (purity 99.995%) powder 2g (component B) be placed in furnace In the evaporation source device 5 at the bottom of the body 1, the above-mentioned evaporation source device 5, the annular structure 12, the shelf 13, the substrate 4, the heat preservation device 6 and the voltage stabilizing device 3 are sequentially put into the furnace body 1, and then the furnace The opening 11 at the upper end of the body 1 is tightly sealed by the air cover and the rubber ring 71; then start the vacuum pump to vacuum the system to 3X10 -2 The temperature can be heated up below the Pa, and the temperature c...

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Abstract

The invention provides a semiconductor thin film preparation device and a preparation method, and relates to the technical field of semiconductor thin film processing. The invention mainly aims to solve the technical problem that the thin film thickness is thinner in the prior art. The semiconductor thin film preparation device comprises a furnace body arranged in the perpendicular direction, at least one evaporation source device arranged in the furnace body, and a substrate located on the upper part of the at least one evaporation source device, wherein the evaporation source device is located at the lower end of the furnace body; the at least one evaporation source device is opposite to the substrate; an opening is formed in the upper end of the furnace body; and a vacuum pump is connected with the furnace body through the opening and is used for extracting gas in the furnace body. When the semiconductor thin film preparation device is started, the positions where the evaporation source device and the substrate are located are at the vacuum state, and materials located on the evaporation source device can move in the perpendicular direction at faster speed under the vacuum stateand are deposited on the substrate so as to form a super-thick thin film within a shorter time.

Description

technical field [0001] The invention relates to the technical field of semiconductor thin film processing, in particular to a semiconductor thin film preparation device and a preparation method. Background technique [0002] At present, there are many methods for preparing semiconductor thin films, such as electrochemical deposition (ECD), metal organic compound chemical vapor deposition (MOCVD), pulsed laser method, molecular beam growth method, co-evaporation method, flash evaporation method, ion beam sputtering and other traditional methods. . The above-mentioned preparation methods have problems such as composition deviation from the stoichiometric ratio, expensive instruments and equipment, and high risk of production to varying degrees. More importantly, the above film preparation methods are usually only suitable for preparing thin films, such as films with a thickness of 1 μm or less. However, in some special applications, ultra-thick films with a thickness of tens...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/24C23C14/56C23C14/58
CPCC23C14/24C23C14/56C23C14/5806
Inventor 何元金
Owner 何元金
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